NECs 1.8 V L, S-BAND SPDT SWITCH

DESCRIPTION The µPG2006TB is an L, S-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 1.8 V control voltage. FEATURE

GaAs INTEGRATED CIRCUIT

FEATURES • Low insertion loss : LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz • High isolation : ISL = 29 dB TYP. @ Vcont = 1.8 V/0 V, f = 2 GHz ISL = 25 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz • 6-pin super minimold package (2.0 ´ 1.2

NECs 1.8 V L, S-BAND SPDT SWITCH

GaAs INTEGRATED CIRCUIT

FEATURES • Low insertion loss : LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz • High isolation : ISL = 29 dB TYP. @ Vcont = 1.8 V/0 V, f = 2 GHz ISL = 25 dB TYP. @ Vcont = 1.8 V/0 V, f = 2.5 GHz • 6-pin super minimold package (2.0 ´ 1.2

NECs 1.8 V L, S-BAND SPDT SWITCH

DESCRIPTION The µPG2006TB is an L, S-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high isolation by 1.8 V control voltage. FEATURE

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Key Features and Benefits • Long battery life – typically 500 hours • Accurate performance – 0.2% of reading • Robust Case – Ensuring long life in demanding and harsh environments • Selectable auto switch‑off – saves on operational costs • Automatic zero calibration – for added accuracy

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