LOW NOISE WIDE-BAND AMPLIFIER

DESCRIPTION The UPG100 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. This device is suitable for low noise IF gain stages in microwave communication and measurement equipment. FEATURES • ULTRA WIDE BAND: 50 MHz to 3 GHz • LOW NOISE: 2.7 dB TYP

GaAs INTEGRATED CIRCUIT

FEATURES • Wide band : f = 50 MHz to 3 GHz • Input/output impedance matched to 50
• Hermetic sealed ceramic package assures high reliability

GaAs INTEGRATED CIRCUIT

FEATURES • Wide band : f = 50 MHz to 3 GHz

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

LOW NOISE WIDE-BAND AMPLIFIER

DESCRIPTION The UPG100 is a GaAs monolithic integrated circuit designed as a low noise amplifier from 50 MHz to 3 GHz. This device is suitable for low noise IF gain stages in microwave communication and measurement equipment. FEATURES • ULTRA WIDE BAND: 50 MHz to 3 GHz • LOW NOISE: 2.7 dB TYP

LOW NOISE WIDE-BAND AMPLIFIER

WIDE BAND AMPLIFIER CHIPS

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

100/200

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TOGGLE SWITCHES - MINIATURE

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