SURFACE MOUNT N . CHANNEL MOSFET

Description This device is an N-Channel enhancement mode, high density MOSFET. It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three leaded package. Features • Rugged POWERMITE 3® Surface Mount Package • Low On-State Resistance • Avalanche and Surge Rated • High Frequency

SURFACE MOUNT N . CHANNEL MOSFET

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

GOLD BONDED GERMANIUM DIODE

[BKC International Electronics Inc.] GOLD BONDED DIODES

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

MEDIUM AND LOW VOLTAGE GERMANIUM DIODES

Optimized for Radio Frequency Response

Optimized for Radio Frequency Response Can be used in many AM, FM and TV-IF applications, replacing point contact devices. Features ● Lower leakage current ● Flat junction capacitance ● High mechanical strength ● At least 1 million hours MTBF ● BKCs Sigma-Bond™ plating for problem free sold