MOS INTEGRATED CIRCUIT

FEATURES • EMI noise reduced version • Internal high capacity ROM and RAM • External memory expansion space: 64 Kbytes • Minimum instruction execution time can be varied from high-speed (0.48 ms) to ultra-low-speed (122 ms) • I/O ports: 69 (N-ch open-drain: 4) • IEBus controller • Effectiv

MOS INTEGRATED CIRCUIT

FEATURES • Internal high capacity ROM and RAM • External memory expansion space: 64 Kbytes • Instruction execution time can be varied from high-speed (0.5 ms) to ultra-low-speed (122 ms) • I/O ports: 69 (N-ch open-drain: 4) • IEBus controller • Effective transmission rate: 3.9 kbps/17 kbps/

20 (19/32) AWG Tinned Copper

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