MOS INTEGRATED CIRCUIT

FEATURES • EMI noise reduction version (The overall peak level is reduced by 5 to 10 dB.) • Large on-chip ROM & RAM • External memory expansion space: 64 Kbytes • Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) • I/O ports: 69 (N-ch open-d

MOS INTEGRATED CIRCUIT

FEATURES • EMI noise reduction version (The overall peak level is reduced by 5 to 10 dB.) • Large on-chip ROM & RAM • External memory expansion space: 64 Kbytes • Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) • I/O ports: 69 (N-ch open-d

MOS INTEGRATED CIRCUIT

FEATURES • Internal high-capacity ROM and RAM • External memory expansion space : 64 Kbytes • Minimum instruction execution time can be varied from high-speed (0.4 ms) to ultra-low-speed (122 ms) • I/O ports : 69 (N-ch open-drain : 4) • 8-bit resolution A/D converter: 8 channels • 8-bit reso

28 (19/40) AWG Tinned Copper

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