MOS INTEGRATED CIRCUIT

FEATURES • Low-voltage operation: VDD = 1.8 to 5.5 V • Internal memory Program memory (ROM): 2048 × 8 bits (μPD754302, 754302(A)) 4096 × 8 bits (μPD754304, 754304(A)) Data memory (RAM): 256 × 4 bits • Variable instruction execution time effective for highspeed operation and power saving 0

MOS INTEGRATED CIRCUIT

FEATURES • Low-voltage operation: VDD = 1.8 to 5.5 V • Internal memory Program memory (ROM): 2048 × 8 bits (μPD754302, 754302(A)) 4096 × 8 bits (μPD754304, 754304(A)) Data memory (RAM): 256 × 4 bits • Variable instruction execution time effective for highspeed operation and power saving 0

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N