型号 功能描述 生产厂家&企业 LOGO 操作
UPD753108

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

UPD753108

4-bit Single-chip Microcontrollers

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

更新时间:2025-8-7 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
3700
原装现货,当天可交货,原型号开票
NEC
94+
QFP
2550
全新原装进口自己库存优势
NEC
1948+
QFP
6852
只做原装正品现货!或订货假一赔十!
NEC
07+
QFP
1600
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
2016+
QFP
3200
只做原装,假一罚十,公司可开17%增值税发票!
MINI
24+
SMD其他电子元
17
一级代理全新原装现货
NEC
24+
N/A
6868
原装现货,可开13%税票
NEC
23+
QFP
8293
NEC
25+
LQFP64
880000
明嘉莱只做原装正品现货
05+
原厂原装
411
只做全新原装真实现货供应

UPD753108数据表相关新闻