型号 功能描述 生产厂家 企业 LOGO 操作
UPD753104

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

UPD753104

4-bit Single-chip Microcontrollers

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

UPD753104

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

UPD753104

4-BIT SINGLE-CHIP MICROCONTROLLER

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

RENESAS

瑞萨

更新时间:2025-12-27 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
2016+
QFP
2500
只做原装,假一罚十,公司可开17%增值税发票!
NEC
23+
TQFP64
20000
全新原装假一赔十
NEC
05+
TQFP64
1350
全新原装进口自己库存优势
NEC
25+
QFP
65428
百分百原装现货 实单必成
NEC
25+
QFP64
3629
原装优势!房间现货!欢迎来电!
NEC
25+23+
QFP
8696
绝对原装正品全新进口深圳现货
NEC
23+
QFP-64
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
NEC
23+
QFP/64
7000
绝对全新原装!100%保质量特价!请放心订购!
NEC
22+
QFP
8200
全新进口原装现货
NEC
24+
QFP64
4185

UPD753104数据表相关新闻