位置：首页 > IC中文资料第5456页 > UPD70732
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UPD70732 | V810TM 32-BIT MICROPROCESSOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 |   | |
UPD70732 | MOS Integrated Circuit Features High-performance 32-bit architecture for embedded control application • 32-bit separate address/data bus • 1-Kbyte cache memory • Pipeline structure of 1 clock pitch • 16-bit fixed instructions (with some exceptions) • 32-bit general-purpose registers: 32 • 4-Gbyte linear address s | RENESAS 瑞萨 | | |
UPD70732 | V810TM 32-BIT MICROPROCESSOR | RENESAS 瑞萨 | | |
MOS Integrated Circuit Features High-performance 32-bit architecture for embedded control application • 32-bit separate address/data bus • 1-Kbyte cache memory • Pipeline structure of 1 clock pitch • 16-bit fixed instructions (with some exceptions) • 32-bit general-purpose registers: 32 • 4-Gbyte linear address s | RENESAS 瑞萨 | | ||
V810TM 32-BIT MICROPROCESSOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
V810TM 32-BIT MICROPROCESSOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
MOS Integrated Circuit Features High-performance 32-bit architecture for embedded control application • 32-bit separate address/data bus • 1-Kbyte cache memory • Pipeline structure of 1 clock pitch • 16-bit fixed instructions (with some exceptions) • 32-bit general-purpose registers: 32 • 4-Gbyte linear address s | RENESAS 瑞萨 | | ||
MOS Integrated Circuit Features High-performance 32-bit architecture for embedded control application • 32-bit separate address/data bus • 1-Kbyte cache memory • Pipeline structure of 1 clock pitch • 16-bit fixed instructions (with some exceptions) • 32-bit general-purpose registers: 32 • 4-Gbyte linear address s | RENESAS 瑞萨 | | ||
V810TM 32-BIT MICROPROCESSOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
V810TM 32-BIT MICROPROCESSOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
MOS Integrated Circuit Features High-performance 32-bit architecture for embedded control application • 32-bit separate address/data bus • 1-Kbyte cache memory • Pipeline structure of 1 clock pitch • 16-bit fixed instructions (with some exceptions) • 32-bit general-purpose registers: 32 • 4-Gbyte linear address s | RENESAS 瑞萨 | | ||
MOS Integrated Circuit Features High-performance 32-bit architecture for embedded control application • 32-bit separate address/data bus • 1-Kbyte cache memory • Pipeline structure of 1 clock pitch • 16-bit fixed instructions (with some exceptions) • 32-bit general-purpose registers: 32 • 4-Gbyte linear address s | RENESAS 瑞萨 | | ||
V810TM 32-BIT MICROPROCESSOR SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | | ||
TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices 1 Features • Typical accuracy: 0.5 • Supports 200-mA output • Low IQ: 25 μA • Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) • High PSRR: – 70 dB at 100 Hz – 50 dB at 1 MHz • Stable with effective capacitance of 0.1 μF(2) • Thermal shutdown and overcurrent protection | TI 德州仪器 | | ||
200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices 文件：1.23417 Mbytes Page：41 Pages | TI 德州仪器 | | ||
200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices 文件：1.24464 Mbytes Page：42 Pages | TI 德州仪器 | | ||
200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices 文件：1.4398 Mbytes Page：35 Pages | TI 德州仪器 | | ||
Low-Noise, Low-Dropout Regulator for Portable Devices 文件：1.23873 Mbytes Page：41 Pages | TI 德州仪器 | |
UPD70732产品属性
- 类型
描述
- 型号
UPD70732
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
V810TM 32-BIT MICROPROCESSOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
NEW |
QFP |
19526 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
1999 |
QFP |
152 |
原装现货海量库存欢迎咨询 |
|||
- |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
NEC |
25+ |
QFP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
NEC |
2023+ |
QFP100 |
3515 |
专注全新正品,优势现货供应 |
|||
NEC |
25+ |
QFPZ |
1500 |
原装现货热卖中,提供一站式真芯服务 |
|||
NEC |
2447 |
QFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
23+ |
QFP-100 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
23+ |
TQFP/100 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
NEC |
2450+ |
TQFP |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
UPD70732规格书下载地址
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2025-8-12UPD30181AYF1-131-GA3-A 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：UPD30181AYF1-131-GA3-A 品牌：Renesas 包装：50 封装：BGA240
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2020-11-22UPD720114GA-9EU-A
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2020-11-22UPD16818GR-8JG-步进电机控制器/驱动器
描述 该mPD16818是单片双H桥驱动器集成电路，它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管，该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路，使用双极晶体管。此外，驱动电流可以调节，在节电模式下使用外部电阻器。因此，该mPD16818作为一个两相励磁驱动电路的理想，双极步进电机驱动头执行器的一个FDD。 特征 •兼容电源电压3V-/5V- •引脚兼容与mPD16803 •低（顶部和底部的ON电阻马鞍山FET的总和）ON电阻 R
2013-2-5UPD16813-整体式双H桥驱动器电路
描述 该mPD16813是单片双H桥驱动电路，在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级，电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想，双极步进电机驱动头部的一个FDD驱动器。 特征 •低（顶部和底部的ON电阻晶体管的总和）ON电阻RON的典型值=2.0瓦特。 •低电流消耗：国际直拨电话= 100 mA最大。 •降噪电路，操作时INC已关闭。 •小型表面贴装封装：16引脚SOP的塑
2013-2-5
DdatasheetPDF页码索引
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