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UPD65价格
参考价格：￥15.2071
型号：UPD65881GB-132-3BS-A 品牌：Renesas 备注：这里有UPD65多少钱，2025年最近7天走势，今日出价，今日竞价，UPD65批发/采购报价，UPD65行情走势销售排行榜，UPD65报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UPD65 | 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION The µPD64A and 65 feature low-voltage 2.0 V operation, and incorporate a carrier generator for infrared remote control transmission, a standby release function through key entry, and a programmable timer, making them ideal for infrared remote control transmitters. A one-time PROM pr | NEC 瑞萨 |   | |
3-MICROON CMOS GATE ARRAYS Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features | NEC 瑞萨 | | ||
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology. | NEC 瑞萨 | | ||
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology. | NEC 瑞萨 | | ||
3-MICROON CMOS GATE ARRAYS Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features | NEC 瑞萨 | | ||
3-MICROON CMOS GATE ARRAYS Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features | NEC 瑞萨 | | ||
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology. | NEC 瑞萨 | | ||
C-MOS MULTI FUNCTION GATE C-MOS MULTI FUNCTION GATE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology. | NEC 瑞萨 | | ||
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology. | NEC 瑞萨 | | ||
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology. | NEC 瑞萨 | | ||
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology. | NEC 瑞萨 | | ||
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION The μPD65000 (CMOS-3) series of gate arrays are low-power, high-speed devices featuring 2-micron silicon gate CMOS technology. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications. | NEC 瑞萨 | | ||
MOS Integrated Circuit FEATURES • Three independently operated 16-bit counters • Six count modes for each counter • Binary/BCD count operation • Single 5V ±10 power supply • Multiple latch commands for easy monitoring • Count rate: 0 (DC) −33 MHz • Industrial temperature range (Ambient): −40 to 85°C • 44-pin QFP | RENESAS 瑞萨 | | ||
MOS Integrated Circuit FEATURES • Three independently operated 16-bit counters • Six count modes for each counter • Binary/BCD count operation • Single 5V ±10 power supply • Multiple latch commands for easy monitoring • Count rate: 0 (DC) −33 MHz • Industrial temperature range (Ambient): −40 to 85°C • 44-pin QFP | RENESAS 瑞萨 | | ||
MOS Integrated Circuit FEATURES • Synchronous operation • One or two synchronous characters • Internal/external synchronization • Automatic SYNC character insertion • Asynchronous operation • Clock rate (baud rate): ×1, ×16, or ×64 − Send stop bits: 1, 1.5, or 2 bits − Break transmission − Automatic break detec | RENESAS 瑞萨 | | ||
MOS Integrated Circuit FEATURES • Synchronous operation • One or two synchronous characters • Internal/external synchronization • Automatic SYNC character insertion • Asynchronous operation • Clock rate (baud rate): ×1, ×16, or ×64 − Send stop bits: 1, 1.5, or 2 bits − Break transmission − Automatic break detec | RENESAS 瑞萨 | | ||
MOS Integrated Circuit FEATURES • Three 8-bit I/O ports • Three programmable operation modes • Bit manipulation command • Microcontroller-compatible • No-wait operation • CMOS technology • Single power supply: 5V ±10 • Industrial temperature range (Ambient): –40 to 85°C • 44-pin QFP package • RoHS-compliant | RENESAS 瑞萨 | | ||
MOS Integrated Circuit FEATURES • Three 8-bit I/O ports • Three programmable operation modes • Bit manipulation command • Microcontroller-compatible • No-wait operation • CMOS technology • Single power supply: 5V ±10 • Industrial temperature range (Ambient): –40 to 85°C • 44-pin QFP package • RoHS-compliant | RENESAS 瑞萨 | | ||
MOS INTEGRATED CIRCUIT FEATURES • Direct connection to any MIPS R4x00 CPU with a 32-bit SysAD bus • Direct connection to 32-bit 33 MHz PCI bus, conforming to Rev. 2.1 • Integrated PCI arbiter acting as PCI master or target • Independent CPU and PCI input clocks • Internal ‘cache’ for local memory locations provides | RENESAS 瑞萨 | | ||
4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION The µPD64A and 65 feature low-voltage 2.0 V operation, and incorporate a carrier generator for infrared remote control transmission, a standby release function through key entry, and a programmable timer, making them ideal for infrared remote control transmitters. A one-time PROM pr | NEC 瑞萨 | | ||
MOS INTEGRATED CIRCUIT FEATURES • Program memory (ROM) • mPD64A: 1002 ´ 10 bits • mPD65: 2026 ´ 10 bits • Data memory (RAM): 32 ´ 4 bits • On-chip carrier generator for infrared remote control • 9-bit programmable timer: 1 channel • Instruction execution time: 16 ms (when operating at fX = 4 MHz: ceramic oscillat | RENESAS 瑞萨 | | ||
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS | RENESAS 瑞萨 | | ||
AUTOMOTIVE CLOCK CMOS LSI | RENESAS 瑞萨 | | ||
AUTOMOTIVE CLOCK CMOS LSI 文件：431.18 Kbytes Page：6 Pages | NEC 瑞萨 | | ||
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) | RENESAS 瑞萨 | | ||
MOS Integrated Circuit 文件：75.91 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
MOS Integrated Circuit 文件：75.91 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
MOS Integrated Circuit 文件：76.27 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
MOS Integrated Circuit 文件：76.27 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
MOS Integrated Circuit 文件：75.94 Kbytes Page：8 Pages | NEC 瑞萨 | | ||
MOS Integrated Circuit 文件：75.94 Kbytes Page：8 Pages | NEC 瑞萨 | |
UPD65产品属性
- 类型
描述
- 型号
UPD65
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
9048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
NEC |
23+ |
DIP48 |
20000 |
全新原装假一赔十 |
|||
NEC |
25+ |
DIP-16 |
65428 |
百分百原装现货 实单必成 |
|||
NEC |
25+ |
QFP |
12496 |
NEC原装正品UPD65894GJ-022即刻询购立享优惠#长期有货 |
|||
NEC |
24+ |
QFP |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
01+02+ |
DIP48 |
80 |
全新原装进口自己库存优势 |
|||
原装 |
25+ |
QFP |
2700 |
全新原装自家现货优势! |
|||
NEC |
2025+ |
BGA |
3925 |
全新原装、公司现货热卖 |
|||
NEC |
NEW |
DIP |
19526 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
25+ |
DIP-16 |
30000 |
代理全新原装现货,价格优势 |
UPD65规格书下载地址
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2025-8-12UPD30181AYF1-131-GA3-A 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：UPD30181AYF1-131-GA3-A 品牌：Renesas 包装：50 封装：BGA240
2021-9-3UPD720114GA-YEU-AT
UPD720114GA-YEU-AT，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22UPD720114GA-9EU-A
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2020-11-22UPD16818GR-8JG-步进电机控制器/驱动器
描述 该mPD16818是单片双H桥驱动器集成电路，它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管，该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路，使用双极晶体管。此外，驱动电流可以调节，在节电模式下使用外部电阻器。因此，该mPD16818作为一个两相励磁驱动电路的理想，双极步进电机驱动头执行器的一个FDD。 特征 •兼容电源电压3V-/5V- •引脚兼容与mPD16803 •低（顶部和底部的ON电阻马鞍山FET的总和）ON电阻 R
2013-2-5UPD16813-整体式双H桥驱动器电路
描述 该mPD16813是单片双H桥驱动电路，在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级，电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想，双极步进电机驱动头部的一个FDD驱动器。 特征 •低（顶部和底部的ON电阻晶体管的总和）ON电阻RON的典型值=2.0瓦特。 •低电流消耗：国际直拨电话= 100 mA最大。 •降噪电路，操作时INC已关闭。 •小型表面贴装封装：16引脚SOP的塑
2013-2-5
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