4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS INTEGRATED CIRCUIT

FEATURES • Program memory (ROM) · mPD6133: 512 ´ 10 bits · mPD6134: 1002 ´ 10 bits • Data memory (RAM): 32 ´ 4 bits • Built-in carrier generation circuit for infrared remote control • 9-bit programmable timer : 1 channel • Command execution time : 8 ms (when operating at fX = 1 MHz: ceramic

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

DESCRIPTION\nEquipped with low-voltage 1.8V operation, a carrier generation circuit for infrared remote control transmission, a standby release function through key entry, and a programmable timer, the µPD6133 and 6134 are suitable for infrared remote control transmitters.\nFor the µPD6133 and 6134, • Program memory (ROM)\n  · µPD6133: 512 ×10 bits\n  · µPD6134: 1002 ×10 bits\n• Data memory (RAM): 32 ×4 bits\n• Built-in carrier generation circuit for infrared remote control\n• 9-bit programmable timer : 1 channel\n• Command execution time : 8 µs (when operating at fX= 1 MHz: ceramic oscillation;

4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS INTEGRATED CIRCUIT

FEATURES • Program memory (ROM) · mPD6133: 512 ´ 10 bits · mPD6134: 1002 ´ 10 bits • Data memory (RAM): 32 ´ 4 bits • Built-in carrier generation circuit for infrared remote control • 9-bit programmable timer : 1 channel • Command execution time : 8 ms (when operating at fX = 1 MHz: ceramic

PCS/CDMA 3.5V/29dBm Linear Power Amplifier Module

PRODUCT DESCRIPTION The AWT6133 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technol

Smart Highside Power Switch

General Description N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection functions. Features • Short circuit protection with latch • C

3ppm/C, Low-Power, Low-Dropout Voltage Reference

General Description The MAX6133 high-precision, low-power, low-dropout voltage reference features a low 3ppm/°C (max) temperature coefficient and a low dropout voltage (200mV, max). This series-mode device features bandgap technology for low-noise performance and excellent accuracy. Load regulati