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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
UPD6133 | 4-BITSINGLE-CHIPMICROCONTROLLERFORINFRAREDREMOTECONTROLTRANSMISSION SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
UPD6133 | MOSINTEGRATEDCIRCUIT FEATURES •Programmemory(ROM) ·mPD6133:512´10bits ·mPD6134:1002´10bits •Datamemory(RAM):32´4bits •Built-incarriergenerationcircuitforinfraredremotecontrol •9-bitprogrammabletimer:1channel •Commandexecutiontime:8ms(whenoperatingatfX=1MHz:ceramic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
4-BITSINGLE-CHIPMICROCONTROLLERFORINFRAREDREMOTECONTROLTRANSMISSION SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSINTEGRATEDCIRCUIT FEATURES •Programmemory(ROM) ·mPD6133:512´10bits ·mPD6134:1002´10bits •Datamemory(RAM):32´4bits •Built-incarriergenerationcircuitforinfraredremotecontrol •9-bitprogrammabletimer:1channel •Commandexecutiontime:8ms(whenoperatingatfX=1MHz:ceramic | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ForPC-9800(MS-DOS-TMBased),ForIBMPC/ATTM(PCDOS-TMBased) AS6133Ver.2.21orLater Assembler ForPC-9800(MS-DOS™Based)ForIBMPC/AT™(PCDOS™Based) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
PCS/CDMA3.5V/29dBmLinearPowerAmplifierModule PRODUCTDESCRIPTION TheAWT6133meetstheincreasingdemandsforhigherefficiencyandlinearityinCDMA1XRTThandsets.ThePAmoduleisoptimizedforVREF=+2.85V,arequirementforcompatibilitywiththeQualcomm®6000chipset.ThedeviceismanufacturedonanadvancedInGaPHBTMMICtechnol | ANADIGICS ANADIGICS |  | | |
SmartHighsidePowerSwitch GeneralDescription NchannelverticalpowerFETwithchargepump,currentcontrolledinputanddiagnosticfeedbackwithloadcurrentsense,integratedinSmartSIPMOS®chiponchiptechnology.Fullyprotectedbyembeddedprotectionfunctions. Features •Shortcircuitprotectionwithlatch •C | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
MetallizedPolypropyleneFilmCapacitor MetallizedPolypropyleneFilmCapacitor Type:ECWF(L) Non-inductiveconstructionusingmetallizedpolypropylenefilmwithflameretardantepoxyresincoating. Features ●Smallsize ●Excellentfrequencycharacteristics ●Lowloss ●Flameretardantepoxyresincoating ●85°C,85RH,W.V. | PanasonicPanasonic Corporation 松下松下电器 |  | | |
MetallizedpolyoropyleneFilmCapacitor MetallizedPolypropyleneFilmCapacitor Type:ECWF(L) Non-inductiveconstructionusingmetallizedpolypropylenefilmwithflameretardantepoxyresincoating. Features ●Smallsize ●Excellentfrequencycharacteristics ●Lowloss ●Flameretardantepoxyresincoating ●85°C,85RH,W.V. | PanasonicPanasonic Corporation 松下松下电器 | | |
UPD6133产品属性
- 类型
描述
- 型号
UPD6133
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
2023+ |
BGA |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
NEC |
23+24 |
SMD20 |
29850 |
原装原盘原标.保证每一片都来自原厂 |
|||
RENESAS |
2223+ |
BGA |
5708 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
RENESAS/瑞萨 |
22+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS/瑞萨 |
22+ |
BGA |
54990 |
郑重承诺只做原装进口货 |
|||
NEC |
97+ |
SOP |
4485 |
原装现货!低价支持实单!贵了给接受价格! |
|||
NEC |
23+ |
NA |
3230 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
RENESAS |
21+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS |
23+ |
BGA |
1200 |
原装正品现货 |
|||
NEC |
20+/21+ |
SSOP |
9500 |
全新原装进口价格优惠 |
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前天 13:52UPD30181AYF1-131-GA3-A 瑞智芯 只有原装
深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：UPD30181AYF1-131-GA3-A 品牌：Renesas 包装：50 封装：BGA240
2021-9-3UPD720114GA-YEU-AT
UPD720114GA-YEU-AT，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22UPD720114GA-9EU-A
UPD720114GA-9EU-A，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22UPD16818GR-8JG-步进电机控制器/驱动器
描述该mPD16818是单片双H桥驱动器集成电路，它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管，该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路，使用双极晶体管。此外，驱动电流可以调节，在节电模式下使用外部电阻器。因此，该mPD16818作为一个两相励磁驱动电路的理想，双极步进电机驱动头执行器的一个FDD。特征•兼容电源电压3V-/5V-•引脚兼容与mPD16803•低（顶部和底部的ON电阻马鞍山FET的总和）ON电阻R
2013-2-5UPD16813-整体式双H桥驱动器电路
描述该mPD16813是单片双H桥驱动电路，在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级，电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想，双极步进电机驱动头部的一个FDD驱动器。特征•低（顶部和底部的ON电阻晶体管的总和）ON电阻RON的典型值=2.0瓦特。•低电流消耗：国际直拨电话=100mA最大。•降噪电路，操作时INC已关闭。•小型表面贴装封装：16引脚SOP的塑
2013-2-5
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