65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY

DESCRIPTION The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent. The /lPD4164 utilizes a double-poly-layer N-chann

65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY

DESCRIPTION The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent. The /lPD4164 utilizes a double-poly-layer N-chann

65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY

DESCRIPTION The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent. The /lPD4164 utilizes a double-poly-layer N-chann

65,536 x 1 BIT DYNAMIC RANDOM ACCESS MEMORY

DESCRIPTION The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated - its operation is both automatic and transparent. The /lPD4164 utilizes a double-poly-layer N-chann

8,192 x 8-BIT NMOS XRAM

8,192 x 8-Bit NMOS XRAM

8,192 x 8-BIT NMOS XRAM

8,192 x 8-Bit NMOS XRAM

8,192 x 8-BIT NMOS XRAM

8,192 x 8-Bit NMOS XRAM

8,192 x 8-BIT NMOS XRAM

8,192 x 8-Bit NMOS XRAM

8,192 x 8-BIT NMOS XRAM

8,192 x 8-Bit NMOS XRAM

8,192 x 8-BIT NMOS XRAM

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ S

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

3.0 mm X 7.0 mm Series

文件：32.159 Kbytes Page：1 Pages

16,384 X 1 BIT DYNAMIC RAM

16,384 X 1 BIT DYNAMIC RAM

16384-BIT (16384 X 1 ) DYNAMIC RAM

16,384-BIT DYNAMIC RANDOM-ACCESS MEMORY

16,384-BIT DYNAMIC RANDOM-ACCESS MEMORY