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UPD16601

MOS Integrated Circuit

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

UPD16601

MOS Integrated Circuit

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Built-in charge pump • Low on-state resistance • Short-circuit protection - Shutdown by short-circuit detection • Over-temperature protection - Shutdown with auto-restart on cooling • Small multi-chip package: JEDEC 5-pin TO-252 (MSL: 3, profile acc. J-STD-20C) • Built-in diagn

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Built-in charge pump • Low on-state resistance • Short-circuit protection - Shutdown by short-circuit detection • Over-temperature protection - Shutdown with auto-restart on cooling • Small multi-chip package: JEDEC 5-pin TO-252 (MSL: 3, profile acc. J-STD-20C) • Built-in diagn

RENESAS

瑞萨

Intelligent Power Devices-Protected and Intelligent Power Switches

• Built-in charge pump\n• Short circuit protection\n• Shutdown by over current detection and over load detection\n• Shutdown with auto-restart on cooling\n• Built-in diagnostic function\n• Defined fault signal in case of abnormal load condition\n• Defined fault signal in case of abnormal load condit;

RENESAS

瑞萨

MOS Integrated Circuit

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS Integrated Circuit

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

INTELLIGENT POWER DEVICE

文件:211.73 Kbytes Page:28 Pages

RENESAS

瑞萨

INTELLIGENT POWER DEVICE

文件:211.73 Kbytes Page:28 Pages

RENESAS

瑞萨

INTELLIGENT POWER DEVICE

文件:212.72 Kbytes Page:28 Pages

RENESAS

瑞萨

Intelligent Power Devices

RENESAS

瑞萨

INTELLIGENT POWER DEVICE

文件:212.72 Kbytes Page:28 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

文件:133.76 Kbytes Page:17 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

文件:133.76 Kbytes Page:17 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

文件:133.76 Kbytes Page:17 Pages

RENESAS

瑞萨

INTELLIGENT POWER DEVICE

文件:188.65 Kbytes Page:24 Pages

RENESAS

瑞萨

Single P-Channel High-Side Intelligent Power Device

文件:168.38 Kbytes Page:18 Pages

RENESAS

瑞萨

Single P-Channel High-Side Intelligent Power Device

文件:168.38 Kbytes Page:18 Pages

RENESAS

瑞萨

18-bit universal bus transceiver 3-State

DESCRIPTION The 74ALVT16601 is a high-performance BiCMOS product designed for VCC operation at 2.5V and 3.3V with I/O compatibility up to 5V. FEATURES • 18-bit bidirectional bus interface • 5V I/O Compatible • 3-State buffers • Output capability: +64mA/-32mA • TTL input and output switching

PHILIPS

飞利浦

Smartcard MCU With 1088 Bytes EEPROM

DESCRIPTION The ST16601, a member of the standard ST16 device family, is a serial access microcontroller especially designed for high volume and cost competitive Smartcard applications where firmware security algorithm must be implemented. ■ 8 BIT ARCHITECTURE CPU ■ 6 KBytes of USER ROM SECTOR

STMICROELECTRONICS

意法半导体

UPD16601产品属性

  • 类型

    描述

  • Nch/Pch:

    Nch

  • Automotive:

    YES

  • Package Type:

    TO252-5

  • Type:

    High side

  • Channels:

    1

  • RON (mohm) max. @ Tj = 25 °C:

    10

  • RON (mohm) max. @ Tj = 150 °C:

    18

  • Vcc (V) min.:

    8

  • Vcc (V) max.:

    18

  • Vload dump (V):

    40

  • IL (A) typ.:

    7.5

  • IL(SC) (A):

    76

  • Diagnostic:

    Current Sense

  • ton (μs) max.:

    500

  • toff (μs) max.:

    600

  • Tch (°C) min.:

    -40

  • Tch (°C) max.:

    150

  • Mounting:

    SMD

  • Production Status:

    Non-promotion

更新时间:2026-5-15 19:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
22+
SOT-252-5
20000
公司只做原装 品质保证
RENESAS
24+
SOP8
8540
只做原装正品现货或订货假一赔十!
RENESAS/瑞萨
1316+
TO-252
538
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
25+
HSSOP12
6500
百分百原装正品 真实公司现货库存 本公司只做原装 可
RENESAS/瑞萨
22+
SOP8
12245
现货,原厂原装假一罚十!
RENESAS/瑞萨
25+
SOP8
880000
明嘉莱只做原装正品现货
RENESAS
25+23+
TO-252
18938
绝对原装正品全新进口深圳现货
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
RENESAS/瑞萨
25+
HSSOP12
11500
原装现货,价格优势
RENESAS
25+
5000
只做原装鄙视假货15118075546

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    描述 该mPD16813是单片双H桥驱动电路,在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级,电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想,双极步进电机驱动头部的一个FDD驱动器。 特征 •低(顶部和底部的ON电阻晶体管的总和)ON电阻RON的典型值=2.0瓦特。 •低电流消耗:国际直拨电话= 100 mA最大。 •降噪电路,操作时INC已关闭。 •小型表面贴装封装:16引脚SOP的塑

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    描述 该μPD168116A是一个7通道H -桥用微小阶跃函数配套脉冲输入认为A由司机CMOS控制电路和一MOS输出阶段。它能降低电流消耗和在电压亏损输出级则为常规驱动程序使用双极晶体管,多亏一个MOS工艺就业。该μPD168116A可以驱动通过输入脉冲一步进电机,使信号行数必要 控制电机可以下降。 包是一个56引脚WQFN,有助于降低安装面积和高度。 该μPD168116A可以用来驱动两个步进马达或两个DC马达和一线圈。 特征 •七个H桥电路用人功率MOSFET •低电压驾驶 VDD的= 2.7

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    描述 μPD168002的是单片6通道H桥驱动的CMOS控制电路和一个MOS输出由阶段。它可以减少电流消耗,并在输出级的电压损失与常规驱动程序使用双极晶体管,MOS工艺的一个工作表示感谢。在μPD168002采用P沟道MOS管场效应管输出级,并消除了电荷泵电路。因此,电路中的电流消耗操作可以大大减少。该封装是48引脚TQFP,有助于减少安装面积和高度。在μPD168002可以用来驱动一个步进马达和四个直流电动机,是为电机驱动器,适合 CD-ROM/CD音频。 特征 •六H桥电路采用功率MOS场效应管 ̶

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