UPC815价格

参考价格:¥1.1700

型号:UPC8151TB-E3 品牌:NEC 备注:这里有UPC815多少钱,2026年最近7天走势,今日出价,今日竞价,UPC815批发/采购报价,UPC815行情走势销售排行榜,UPC815报价。
型号 功能描述 生产厂家 企业 LOGO 操作
UPC815

BIPOLAR ANALOG INTEGRATED CIRCUITS

文件:813.14 Kbytes Page:12 Pages

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB)

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB)

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB)

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50

NEC

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB)

RENESAS

瑞萨

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

NEC

瑞萨

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

NEC

瑞萨

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

NEC

瑞萨

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

NEC

瑞萨

900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

NEC

瑞萨

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

NEC

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage: VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V • Built-in LPF suppresses spurious multipled by TX local (LO1) • AGC amplifier is installed in local port of up converter: GCR = 35 dB MIN. @ fout = 1.5 GHz • Excellent performance: Padj = –65 dBc TYP. @ Df = ±50 kHz, EVM

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage: VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V • Built-in LPF suppresses spurious multipled by TX local (LO1) • AGC amplifier is installed in local port of up converter: GCR = 35 dB MIN. @ fout = 1.5 GHz • Excellent performance: Padj = –65 dBc TYP. @ Df = ±50 kHz, EVM

RENESAS

瑞萨

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

NEC

瑞萨

SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES

文件:206.17 Kbytes Page:10 Pages

CEL

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件:593.31 Kbytes Page:27 Pages

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES

CEL

SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES

文件:206.17 Kbytes Page:10 Pages

CEL

包装:盒 描述:EVAL BOARD FOR UPC8151 900MHZ 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

包装:盒 描述:EVAL BOARD FOR UPC8151 1.9GHZ 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件:593.31 Kbytes Page:27 Pages

CEL

AGC/UP-CONVERTER WITH IQ MODULATOR

RENESAS

瑞萨

AGC/UP-CONVERTER WITH IQ MODULATOR

文件:66.74 Kbytes Page:5 Pages

NEC

瑞萨

AGC/UP-CONVERTER WITH IQ MODULATOR

文件:66.74 Kbytes Page:5 Pages

NEC

瑞萨

AGC/UP-CONVERTER WITH IQ MODULATOR

文件:66.74 Kbytes Page:5 Pages

NEC

瑞萨

General-purpose Linear-Operational Amplifiers (op-amp)

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

文件:813.14 Kbytes Page:12 Pages

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUITS

文件:813.14 Kbytes Page:12 Pages

RENESAS

瑞萨

Simultaneously displays measured value and Q or dissipation factor

文件:1.53509 Mbytes Page:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Panel Mount for 5x20 mm und 6.3x32 mm Fuses

文件:178.31 Kbytes Page:1 Pages

LITTELFUSE

力特

PC Mount, Shocksafe 5x20mm / 6.3x32mm Fuses

文件:83.1 Kbytes Page:1 Pages

LITTELFUSE

力特

PC Mount, Shocksafe 5x20mm / 6.3x32mm Fuses

文件:83.39 Kbytes Page:1 Pages

LITTELFUSE

力特

PC Mount, Shocksafe 5x20mm / 6.3x32mm Fuses

文件:81.73 Kbytes Page:1 Pages

LITTELFUSE

力特

UPC815产品属性

  • 类型

    描述

  • 型号

    UPC815

  • 功能描述

    UPC815.816 Data Sheet | Data Sheet[03/1993]

更新时间:2026-3-2 14:26:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
SOT-363
25000
一级专营品牌全新原装热卖
NEC
2023+
SSOP-6
1344
专注全新正品,优势现货供应
RENESAS/瑞萨
22+
DIP8
12245
现货,原厂原装假一罚十!
NEC
25+
SO-23-6
2789
全新原装自家现货!价格优势!
NEC
25+
SSOP-6
3000
全新原装、诚信经营、公司现货销售!
NEC
25+
SOT-363
32000
NEC全新特价UPC8151TB-E3即刻询购立享优惠#长期有货
NEC
25+
SSOP-6
90000
一级代理商进口原装现货、价格合理
RENESAS
23+
SOT-363
8560
受权代理!全新原装现货特价热卖!
NEC
06+
DIP/8
79
原装现货海量库存欢迎咨询
RENESAS
原厂封装
9800
原装进口公司现货假一赔百

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