位置:首页 > IC中文资料第5631页 > UPC815
UPC815价格
参考价格:¥1.1700
型号:UPC8151TB-E3 品牌:NEC 备注:这里有UPC815多少钱,2025年最近7天走势,今日出价,今日竞价,UPC815批发/采购报价,UPC815行情走势销售排行榜,UPC815报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UPC815 | BIPOLAR ANALOG INTEGRATED CIRCUITS 文件:813.14 Kbytes Page:12 Pages | RENESAS 瑞萨 | ||
BIPOLAR ANALOG INTEGRATED CIRCUITS FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO | RENESAS 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern | NEC 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUITS FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO | RENESAS 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUITS FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB) | RENESAS 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50 | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50 | NEC 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUITS FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB) | RENESAS 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUITS FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO | RENESAS 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern | NEC 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUITS FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO | RENESAS 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUITS FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB) | RENESAS 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50 | NEC 瑞萨 | |||
SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50 | NEC 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUITS FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB) | RENESAS 瑞萨 | |||
RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun | NEC 瑞萨 | |||
UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func | NEC 瑞萨 | |||
UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de | NEC 瑞萨 | |||
RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun | NEC 瑞萨 | |||
900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac | NEC 瑞萨 | |||
Single Chip Transceiver Silicon MMIC for PHS DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve | NEC 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Supply voltage: VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V • Built-in LPF suppresses spurious multipled by TX local (LO1) • AGC amplifier is installed in local port of up converter: GCR = 35 dB MIN. @ fout = 1.5 GHz • Excellent performance: Padj = –65 dBc TYP. @ Df = ±50 kHz, EVM | RENESAS 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Supply voltage: VCC = 2.7 to 4.0 V, ICC = 28 mA @ VCC = 3.0 V • Built-in LPF suppresses spurious multipled by TX local (LO1) • AGC amplifier is installed in local port of up converter: GCR = 35 dB MIN. @ fout = 1.5 GHz • Excellent performance: Padj = –65 dBc TYP. @ Df = ±50 kHz, EVM | RENESAS 瑞萨 | |||
RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun | NEC 瑞萨 | |||
SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES 文件:206.17 Kbytes Page:10 Pages | CEL | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS 文件:593.31 Kbytes Page:27 Pages | CEL | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件:1.63019 Mbytes Page:25 Pages | CEL | |||
SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES | CEL | |||
SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES 文件:206.17 Kbytes Page:10 Pages | CEL | |||
包装:盒 描述:EVAL BOARD FOR UPC8151 900MHZ 开发板,套件,编程器 射频评估和开发套件,开发板 | CEL | |||
包装:盒 描述:EVAL BOARD FOR UPC8151 1.9GHZ 开发板,套件,编程器 射频评估和开发套件,开发板 | CEL | |||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件:1.63019 Mbytes Page:25 Pages | CEL | |||
SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS 文件:593.31 Kbytes Page:27 Pages | CEL | |||
AGC/UP-CONVERTER WITH IQ MODULATOR | RENESAS 瑞萨 | |||
AGC/UP-CONVERTER WITH IQ MODULATOR 文件:66.74 Kbytes Page:5 Pages | NEC 瑞萨 | |||
AGC/UP-CONVERTER WITH IQ MODULATOR 文件:66.74 Kbytes Page:5 Pages | NEC 瑞萨 | |||
AGC/UP-CONVERTER WITH IQ MODULATOR 文件:66.74 Kbytes Page:5 Pages | NEC 瑞萨 | |||
General-purpose Linear-Operational Amplifiers (op-amp) | RENESAS 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUITS 文件:813.14 Kbytes Page:12 Pages | RENESAS 瑞萨 | |||
BIPOLAR ANALOG INTEGRATED CIRCUITS 文件:813.14 Kbytes Page:12 Pages | RENESAS 瑞萨 | |||
Simultaneously displays measured value and Q or dissipation factor 文件:1.53509 Mbytes Page:8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Panel Mount for 5x20 mm und 6.3x32 mm Fuses 文件:178.31 Kbytes Page:1 Pages | Littelfuse 力特 | |||
PC Mount, Shocksafe 5x20mm / 6.3x32mm Fuses 文件:83.1 Kbytes Page:1 Pages | Littelfuse 力特 | |||
PC Mount, Shocksafe 5x20mm / 6.3x32mm Fuses 文件:83.39 Kbytes Page:1 Pages | Littelfuse 力特 | |||
PC Mount, Shocksafe 5x20mm / 6.3x32mm Fuses 文件:81.73 Kbytes Page:1 Pages | Littelfuse 力特 |
UPC815产品属性
- 类型
描述
- 型号
UPC815
- 功能描述
UPC815.816 Data Sheet | Data Sheet[03/1993]
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
SOT363 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
NEC |
25+ |
6000 |
福安瓯为您提供真芯库存,真诚服务 |
||||
RENESAS/瑞萨 |
2447 |
DIP8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
DIP8 |
8000 |
只做原装现货 |
|||
NEC |
23+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
24+ |
DIP8P |
6868 |
原装现货,可开13%税票 |
|||
NEC |
19+ |
SOT-363 |
200000 |
原装代理无铅库存 |
|||
NEC |
24+ |
SSOP-6 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
NEC |
23+ |
DIP/8 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
UPC815规格书下载地址
UPC815参数引脚图相关
- wm7
- wimax网络
- wcdma手机
- w5500
- w300
- w230
- w200
- vp5
- voip技术
- viper22a
- viper22
- viper12
- vip12a
- vga接口
- v8000
- usb声卡
- usb连接器
- usb接口电路
- usb3.0
- UPS电源
- UPD2415DF
- UPD2415D
- UPD2415-10
- UPD2415
- UPD166033T1U-E1-AY#YJ1
- UPD166025T1J-E1-AY
- UPD120N33T1B
- UPD1002-A/MQ
- UPD1001-AI/MQ
- UPD014A
- UPD013A
- UPD012A
- UPD010A
- UPD008A
- UPD007A
- UPD005A
- UPD004A
- UPD003A
- UPD002A
- UPD001A
- UPC844C
- UPC844
- UPC842C
- UPC842
- UPC832C
- UPC832
- UPC8232T5N-A
- UPC8231
- UPC8230TU-A
- UPC8211TK-E2-A
- UPC8191T5E
- UPC8182TB
- UPC8179TB
- UPC8179
- UPC8172TK
- UPC8172TB-A
- UPC8172TB
- UPC8163TB-E3
- UPC8158
- UPC8151TB-E3
- UPC814C
- UPC814
- UPC812C
- UPC8128TB
- UPC8125
- UPC8120T
- UPC812
- UPC8106TB-A
- UPC8106T
- UPC8106
- UPC8104
- UPC8103
- UPC8102
- UPC8101
- UPC8100
- UPC805T
- UPC8026
- UPC8002
- UPC8001
- UPC78L15T
- UPC78L12T
- UPC78L10T
- UPC78L08T
- UPC78L06T
- UPC78L05T
- UPC7805
- UPC754D
- UPC754
- UPC741C
- UPC741
- UPC3239TB-A
- UPC3237TK-EVAL-A
- UPC3224TB
- UPC3223TB-A
- UPC3215TB
- UPC311G
- UPC29M33T-E1
- UPC29M33AT
- UPC29M10T-E1
- UPC29M08T
UPC815数据表相关新闻
UPC816G-DIP4T-TG_UTC代理商
UPC816G-DIP4T-TG_UTC代理商
2023-3-14UPC817DG-SMD4R-TG_UTC代理商
UPC817DG-SMD4R-TG_UTC代理商
2023-2-3UPC324G2-E2-A
UPC324G2-E2-A
2022-6-6UPC8190T5E-E1,UPD16814GS,UPD17012GF-554,UPD17225GT-G02-E1,
UPC8190T5E-E1,UPD16814GS,UPD17012GF-554,UPD17225GT-G02-E1,
2020-2-27UPC317-3终端正可调稳压器
描述 mPC317是正电压可调三端稳压器,其中有1.5一个输出电流能力。可以由两个外部电阻设置输出电压1.3 V和30 V之间的任何值。 特点 •超过1.5 A的输出电流 •芯片上的一些保护电路(过电流保护,SOA保护和热关机)。
2013-1-9UPC8112TB-IC
描述 mPC8112TB是硅单片集成电路,第一频率下转换器设计用于蜂窝/无绳电话接收阶段。该IC组成的混频器和地方放大器。 mPC8112TB功能高阻抗集电极开路输出。 mPC2757TB和mPC2758TB类似的IC可提供低阻抗射极跟随输出。这些结核病后缀及晶片,体积更小比传统T后缀集成电路的封装有助于减少您的系统的大小。mPC8112TB是使用NEC公司的20 GHz的FT NESAT™III硅双极工艺制造。此过程使用氮化硅钝化膜和金电极。这些材料可以从外部污染芯片表面保护防止腐蚀/迁移。因此,该IC具有优良的性能,均匀性和可靠性。 应用
2012-12-14
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107