DUAL J-FET INPUT LOW-OFFSET OPRERATIONAL AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

High Stability, Low Offset Voltage J-FET Input Dual Operational Amplifier

FEATURES  Input Offset Voltage ±1 mV (TYP.) (±3 mV MAX.)  VIO Temperature Drift ±7 μV/C (TYP.)  Input Bias Current 50 pA (TYP.)  Slew Rate 15 V/μs (TYP.)  Unity Gain Frequency 4 MHz (TYP.)  Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz)  Stable operation against

Dual J-FET Input Low-Offset Operational Amplifier

-15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 800 MHz to 1.5 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. These ICs are lower distortion than conventional µPC8119T

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE

DESCRIPTION The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance wi

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Recommended operating frequency : f = 100 MHz to 1.92 GHz • Supply voltage : VCC = 2.7 to 3.3 V • Low current consumption : ICC = 11 mA TYP. @ VCC = 3.0 V • Gain control voltage : VAGC = 0.6 to 2.4 V (recommended) • Two types of gain control : μPC8119T ; VAGC up vs. Gain down (Forw

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Direct modulation range : 915 MHz to 960 MHz • Pre-mixer for RF and IF local oscillator is incorporated. • External local filter can be applied between pre-mixer output and modulator input port. • Low operation current : ICC = 35 mA (typ.) @VCC = 3 V • Equipped with power save func

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Direct modulation range : 915 MHz to 960 MHz • Pre-mixer for RF and IF local oscillator is incorporated. • External local filter can be applied between pre-mixer output and modulator input port. • Low operation current : ICC = 35 mA (typ.) @VCC = 3 V • Equipped with power save func

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Low current consumption : UPC8128TA ; ICC = 2.8 mA TYP. @ VCC = 3.0 V UPC8151TA ; ICC = 4.2 mA TYP. @ VCC = 3.0 V UPC8152TA ; ICC = 5.6 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • High efficiency : UPC8128TA ; PO (1 dB) = -4.0 dBm TYP. @ f = 1 GHz UPC8151TA ; PO

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The PPC8128TA, PPC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip inductor (example: 1005 size) which can not be realized on intern

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB)

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

DESCRIPTION The µPC8128TB, µPC8151TB and µPC8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external chip inductor (eg 1005 size) which can not be realized on internal 50

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.4 to 3.3 V • Low current consumption : UPC8128TB ; ICC = 2.8 mA TYP. @VCC = 3.0 V UPC8151TB ; ICC = 4.2 mA TYP. @VCC = 3.0 V UPC8152TB ; ICC = 5.6 mA TYP. @VCC = 3.0 V • High efficiency : UPC8128TB ; PO(1 dB) = −4.0 dBm TYP. @f = 1 GHz UPC8151TB ; PO(1 dB)

900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8126K is a silicon monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This IC integrates a pre-mixer for local signals plus a quadrature modulator operating from 889 MHz to 960 MHz. The chip which has been conventionally pac

RF UP-CONVERTER WITH AGC FUNCTION IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8158K is a silicon microwave monolithic integrated circuit designed as quadrature modulator for digital mobile communication systems. This MMIC consists of 0.8 GHz to 1.5 GHz up-converter and 100 MHz to 300 MHz quadrature modulator which are equipped with AGC and power save fun

Single Chip Transceiver Silicon MMIC for PHS

DESCRIPTION The µPC8139GR-7JH is a silicon microwave monolithic IC (SiMMIC) developed as a transceiver for Personal Handyphone System (PHS). This IC is a highly integrated single chip, suitable for PHS, including a quadrature modulator, up converter, and AGC circuit for adjusting the output leve

UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The UPC8125GR is a Silicon MMIC manufactured with the NESAT IIITM silicon bipolar process. The IC consists of a 1.8 - 2.0 GHz upconverter with AGC function and a 220 - 270 MHz IQ modulator. The device operates over a wide 2.7 - 5.5 V supply voltage range and features a power save func

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

UP CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The de

DUAL J-FET INPUT LOW-OFFSET OPRERATIONAL AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL J-FET INPUT LOW-OFFSET OPRERATIONAL AMPLIFIER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

High Stability, Low Offset Voltage J-FET Input Dual Operational Amplifier

FEATURES  Input Offset Voltage ±1 mV (TYP.) (±3 mV MAX.)  VIO Temperature Drift ±7 μV/C (TYP.)  Input Bias Current 50 pA (TYP.)  Slew Rate 15 V/μs (TYP.)  Unity Gain Frequency 4 MHz (TYP.)  Input Equivalent Noise Voltage Density 19 nV/ Hz (TYP.) (f = 1 kHz)  Stable operation against

NECs VARIABLE GAIN AMPLIFIER

文件：720.1 Kbytes Page：4 Pages

SILICON MMIC UPCONVERTER WITH AGC IQ MODULATOR

文件：67.41 Kbytes Page：5 Pages

SILICON MMIC UPCONVERTER WITH AGC IQ MODULATOR

文件：176.91 Kbytes Page：15 Pages

SILICON MMIC UPCONVERTER WITH AGC IQ MODULATOR

文件：176.91 Kbytes Page：15 Pages

SILICON MMIC UPCONVERTER WITH AGC IQ MODULATOR

文件：67.41 Kbytes Page：5 Pages

SILICON MMIC UPCONVERTER WITH AGC IQ MODULATOR

文件：176.91 Kbytes Page：15 Pages

SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES

BIPOLAR ANALOG INTEGRATED CIRCUIT

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

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BIPOLAR ANALOG INTEGRATED CIRCUIT

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包装：盒 描述：EVAL BOARD FOR UPC8128 900MHZ 开发板，套件，编程器 射频评估和开发套件，开发板

包装：盒 描述：EVAL BOARD FOR UPC8128 1.9GHZ 开发板，套件，编程器 射频评估和开发套件，开发板

SI RFIC QUADRATURE MODULATOR WITH UPCONVERTER AND AGC

文件：36.41 Kbytes Page：3 Pages

SI RFIC QUADRATURE MODULATOR WITH UPCONVERTER AND AGC

文件：36.41 Kbytes Page：3 Pages