UPC812价格

参考价格:¥1.1700

型号:UPC8120T 品牌:NEC 备注:这里有UPC812多少钱,2024年最近7天走势,今日出价,今日竞价,UPC812批发/采购报价,UPC812行情走势销售排行榜,UPC812报价。
型号 功能描述 生产厂家&企业 LOGO 操作
UPC812

DUALJ-FETINPUTLOW-OFFSETOPRERATIONALAMPLIFIER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPC812

HighStability,LowOffsetVoltageJ-FETInputDualOperationalAmplifier

FEATURES InputOffsetVoltage±1mV(TYP.)(±3mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate15V/μs(TYP.) UnityGainFrequency4MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagainst

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

-15dBmINPUT,VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE

DESCRIPTION TheµPC8130TAandµPC8131TAaresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto800MHzto1.5GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.TheseICsarelowerdistortionthanconventionalµPC8119T

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE

DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE

DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Recommendedoperatingfrequency:f=100MHzto1.92GHz •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) •Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SingleChipTransceiverSiliconMMICforPHS

DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SingleChipTransceiverSiliconMMICforPHS

DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Directmodulationrange:915MHzto960MHz •Pre-mixerforRFandIFlocaloscillatorisincorporated. •Externallocalfiltercanbeappliedbetweenpre-mixeroutputandmodulatorinputport. •Lowoperationcurrent:ICC=35mA(typ.)@VCC=3V •Equippedwithpowersavefunc

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Directmodulationrange:915MHzto960MHz •Pre-mixerforRFandIFlocaloscillatorisincorporated. •Externallocalfiltercanbeappliedbetweenpre-mixeroutputandmodulatorinputport. •Lowoperationcurrent:ICC=35mA(typ.)@VCC=3V •Equippedwithpowersavefunc

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SingleChipTransceiverSiliconMMICforPHS

DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Lowcurrentconsumption:UPC8128TA;ICC=2.8mATYP.@VCC=3.0V UPC8151TA;ICC=4.2mATYP.@VCC=3.0V UPC8152TA;ICC=5.6mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:UPC8128TA;PO(1dB)=-4.0dBmTYP.@f=1GHz UPC8151TA;PO

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Lowcurrentconsumption:UPC8128TA;ICC=2.8mATYP.@VCC=3.0V UPC8151TA;ICC=4.2mATYP.@VCC=3.0V UPC8152TA;ICC=5.6mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:UPC8128TA;PO(1dB)=-4.0dBmTYP.@f=1GHz UPC8151TA;PO

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Supplyvoltage:VCC=2.4to3.3V •Lowcurrentconsumption:UPC8128TB;ICC=2.8mATYP.@VCC=3.0V UPC8151TB;ICC=4.2mATYP.@VCC=3.0V UPC8152TB;ICC=5.6mATYP.@VCC=3.0V •Highefficiency:UPC8128TB;PO(1dB)=−4.0dBmTYP.@f=1GHz UPC8151TB;PO(1dB)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION TheµPC8128TB,µPC8151TBandµPC8152TBaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellularorcordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(eg1005size)whichcannotberealizedoninternal50

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES

DESCRIPTION TheµPC8128TB,µPC8151TBandµPC8152TBaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellularorcordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(eg1005size)whichcannotberealizedoninternal50

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Supplyvoltage:VCC=2.4to3.3V •Lowcurrentconsumption:UPC8128TB;ICC=2.8mATYP.@VCC=3.0V UPC8151TB;ICC=4.2mATYP.@VCC=3.0V UPC8152TB;ICC=5.6mATYP.@VCC=3.0V •Highefficiency:UPC8128TB;PO(1dB)=−4.0dBmTYP.@f=1GHz UPC8151TB;PO(1dB)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SingleChipTransceiverSiliconMMICforPHS

DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS

DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

DUALJ-FETINPUTLOW-OFFSETOPRERATIONALAMPLIFIER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

DUALJ-FETINPUTLOW-OFFSETOPRERATIONALAMPLIFIER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

HighStability,LowOffsetVoltageJ-FETInputDualOperationalAmplifier

FEATURES InputOffsetVoltage±1mV(TYP.)(±3mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate15V/μs(TYP.) UnityGainFrequency4MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagainst

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NECsVARIABLEGAINAMPLIFIER

文件:720.1 Kbytes Page:4 Pages

CEL

California Eastern Laboratories

CEL

SILICONMMICUPCONVERTERWITHAGCIQMODULATOR

文件:67.41 Kbytes Page:5 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICUPCONVERTERWITHAGCIQMODULATOR

文件:176.91 Kbytes Page:15 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICUPCONVERTERWITHAGCIQMODULATOR

文件:176.91 Kbytes Page:15 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICUPCONVERTERWITHAGCIQMODULATOR

文件:67.41 Kbytes Page:5 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICUPCONVERTERWITHAGCIQMODULATOR

文件:176.91 Kbytes Page:15 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS

文件:593.31 Kbytes Page:27 Pages

CEL

California Eastern Laboratories

CEL

BIPOLARANALOGINTEGRATEDCIRCUIT

文件:1.63019 Mbytes Page:25 Pages

CEL

California Eastern Laboratories

CEL

包装:盒 描述:EVAL BOARD FOR UPC8128 900MHZ 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

California Eastern Laboratories

CEL

包装:盒 描述:EVAL BOARD FOR UPC8128 1.9GHZ 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

California Eastern Laboratories

CEL

SIRFICQUADRATUREMODULATORWITHUPCONVERTERANDAGC

文件:36.41 Kbytes Page:3 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SIRFICQUADRATUREMODULATORWITHUPCONVERTERANDAGC

文件:36.41 Kbytes Page:3 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

AudioBroadcastQuality800ASeries

Features Deep-drawnsteelcasewithtinplatedfinish,withtwoconvenient6-32mountingstuds withhardware. Includeswireleads(minimumlengthof4). Frequencyresponse+/-0.5dbmax.from50Hz.to15Khz. Insertionlossofapx.1db. Maximumpowerlevel+15dbm.(except841A,842A&84

HAMMOND

Hammond Manufacturing Ltd.

HAMMOND

0.5CMOS1.65Vto3.6VQuadSPSTSwitches

GENERALDESCRIPTION TheADG811/ADG812/ADG813arelowvoltageCMOSdevicescontainingfourindependentlyselectableswitches.Theseswitchesofferultralowonresistanceoflessthan0.8Ωoverthefull temperaturerange.Thedigitalinputscanhandle1.8Vlogicwitha2.7Vto3.6Vsupply. FE

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD

Mill-MaxSpring-loadedConnectorsMinimizeNoise

文件:2.45329 Mbytes Page:11 Pages

MILL-MAX

Mill-Max Manufacturing Corp.

MILL-MAX

UPC812产品属性

  • 类型

    描述

  • 型号

    UPC812

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    DUAL J-FET INPUT LOW-OFFSET OPRERATIONAL AMPLIFIER

更新时间:2024-5-11 13:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
22+
SC70-6
9600
原装现货,优势供应,支持实单!
Renesas(瑞萨)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
NEC
22+
SC363
57455
郑重承诺只做原装进口货
NEC
1642+
SOP8
3600
只做原装现货!一片起售!
NEC
86
SOT23-6
880000
明嘉莱只做原装正品现货
NEC
23+
NA
247
航宇科工半导体-中国航天科工集团战略合作伙伴!
NEC
2023+
SOP8
700000
柒号芯城跟原厂的距离只有0.07公分
NEC
21+
DIP
50000
全新原装正品现货,支持订货
NEC
20+/21+
SSOP
9500
全新原装进口价格优惠
NEC
23+
SOT363
999999
原装正品现货量大可订货

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