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UPC812价格
参考价格:¥1.1700
型号:UPC8120T 品牌:NEC 备注:这里有UPC812多少钱,2024年最近7天走势,今日出价,今日竞价,UPC812批发/采购报价,UPC812行情走势销售排行榜,UPC812报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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UPC812 | DUALJ-FETINPUTLOW-OFFSETOPRERATIONALAMPLIFIER SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
UPC812 | HighStability,LowOffsetVoltageJ-FETInputDualOperationalAmplifier FEATURES InputOffsetVoltage±1mV(TYP.)(±3mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate15V/μs(TYP.) UnityGainFrequency4MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagainst | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | ||
-15dBmINPUT,VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE DESCRIPTION TheµPC8130TAandµPC8131TAaresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto800MHzto1.5GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.TheseICsarelowerdistortionthanconventionalµPC8119T | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
VARIABLEGAINAMPLIFIERSILICONMMICFORTRANSMITTERAGCOFDIGITALCELLULARTELEPHONE DESCRIPTION TheµPC8119TandµPC8120Taresiliconmonolithicintegratedcircuitsdesignedasvariablegainamplifier.Dueto100MHzto1.9GHzoperation,theseICsaresuitableforRFtransmitterAGCstageofdigitalcellulartelephone.Twotypesofgaincontrolletuserschooseinaccordancewi | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Recommendedoperatingfrequency:f=100MHzto1.92GHz •Supplyvoltage:VCC=2.7to3.3V •Lowcurrentconsumption:ICC=11mATYP.@VCC=3.0V •Gaincontrolvoltage:VAGC=0.6to2.4V(recommended) •Twotypesofgaincontrol:μPC8119T;VAGCupvs.Gaindown(Forw | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SingleChipTransceiverSiliconMMICforPHS DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SingleChipTransceiverSiliconMMICforPHS DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Directmodulationrange:915MHzto960MHz •Pre-mixerforRFandIFlocaloscillatorisincorporated. •Externallocalfiltercanbeappliedbetweenpre-mixeroutputandmodulatorinputport. •Lowoperationcurrent:ICC=35mA(typ.)@VCC=3V •Equippedwithpowersavefunc | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Directmodulationrange:915MHzto960MHz •Pre-mixerforRFandIFlocaloscillatorisincorporated. •Externallocalfiltercanbeappliedbetweenpre-mixeroutputandmodulatorinputport. •Lowoperationcurrent:ICC=35mA(typ.)@VCC=3V •Equippedwithpowersavefunc | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SingleChipTransceiverSiliconMMICforPHS DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Lowcurrentconsumption:UPC8128TA;ICC=2.8mATYP.@VCC=3.0V UPC8151TA;ICC=4.2mATYP.@VCC=3.0V UPC8152TA;ICC=5.6mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:UPC8128TA;PO(1dB)=-4.0dBmTYP.@f=1GHz UPC8151TA;PO | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Lowcurrentconsumption:UPC8128TA;ICC=2.8mATYP.@VCC=3.0V UPC8151TA;ICC=4.2mATYP.@VCC=3.0V UPC8152TA;ICC=5.6mATYP.@VCC=3.0V •Supplyvoltage:VCC=2.4to3.3V •Highefficiency:UPC8128TA;PO(1dB)=-4.0dBmTYP.@f=1GHz UPC8151TA;PO | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION ThePPC8128TA,PPC8151TAandPPC8152TAaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellular/cordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(example:1005size)whichcannotberealizedonintern | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS DESCRIPTION TheµPC8179TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICcanrealizelowcurrentconsumptionwithexternalchipinductorwhichcannotberealizedoninternal50ΩwidebandmatchedIC.Thislowcurrentamplifieroperateson3.0 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Supplyvoltage:VCC=2.4to3.3V •Lowcurrentconsumption:UPC8128TB;ICC=2.8mATYP.@VCC=3.0V UPC8151TB;ICC=4.2mATYP.@VCC=3.0V UPC8152TB;ICC=5.6mATYP.@VCC=3.0V •Highefficiency:UPC8128TB;PO(1dB)=−4.0dBmTYP.@f=1GHz UPC8151TB;PO(1dB) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION TheµPC8128TB,µPC8151TBandµPC8152TBaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellularorcordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(eg1005size)whichcannotberealizedoninternal50 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICLOWCURRENTAMPLIFIERSFORCELLULAR/CORDLESSTELEPHONES DESCRIPTION TheµPC8128TB,µPC8151TBandµPC8152TBaresiliconmonolithicintegratedcircuitsdesignedasbufferamplifiersforcellularorcordlesstelephones.Theseamplifierscanrealizelowcurrentconsumptionwithexternalchipinductor(eg1005size)whichcannotberealizedoninternal50 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
BIPOLARANALOGINTEGRATEDCIRCUITS FEATURES •Supplyvoltage:VCC=2.4to3.3V •Lowcurrentconsumption:UPC8128TB;ICC=2.8mATYP.@VCC=3.0V UPC8151TB;ICC=4.2mATYP.@VCC=3.0V UPC8152TB;ICC=5.6mATYP.@VCC=3.0V •Highefficiency:UPC8128TB;PO(1dB)=−4.0dBmTYP.@f=1GHz UPC8151TB;PO(1dB) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
900MHzBANDDIRECTQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8126Kisasiliconmonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisICintegratesapre-mixerforlocalsignalsplusaquadraturemodulatoroperatingfrom889MHzto960MHz.Thechipwhichhasbeenconventionallypac | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
RFUP-CONVERTERWITHAGCFUNCTIONIFQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8158Kisasiliconmicrowavemonolithicintegratedcircuitdesignedasquadraturemodulatorfordigitalmobilecommunicationsystems.ThisMMICconsistsof0.8GHzto1.5GHzup-converterand100MHzto300MHzquadraturemodulatorwhichareequippedwithAGCandpowersavefun | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SingleChipTransceiverSiliconMMICforPHS DESCRIPTION TheµPC8139GR-7JHisasiliconmicrowavemonolithicIC(SiMMIC)developedasatransceiverforPersonalHandyphoneSystem(PHS). ThisICisahighlyintegratedsinglechip,suitableforPHS,includingaquadraturemodulator,upconverter,andAGCcircuitforadjustingtheoutputleve | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UP-CONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheUPC8125GRisaSiliconMMICmanufacturedwiththeNESATIIITMsiliconbipolarprocess.TheICconsistsofa1.8-2.0GHzupconverterwithAGCfunctionanda220-270MHzIQmodulator.Thedeviceoperatesoverawide2.7-5.5Vsupplyvoltagerangeandfeaturesapowersavefunc | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
UPCONVERTERWITHAGCFUNCTIONQUADRATUREMODULATORICFORDIGITALMOBILECOMMUNICATIONSYSTEMS DESCRIPTION TheµPC8129GRisasiliconmonolithicintegratedcircuitdesignedasindirectquadraturemodulatorfordigitalmobilecommunicationsystems.Thismodulatorconsistsof0.8GHzto1.9GHzup-converterand100MHzto400MHzquadraturemodulatorwhicharepackagedin20pinSSOP.Thede | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
DUALJ-FETINPUTLOW-OFFSETOPRERATIONALAMPLIFIER SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
DUALJ-FETINPUTLOW-OFFSETOPRERATIONALAMPLIFIER SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
HighStability,LowOffsetVoltageJ-FETInputDualOperationalAmplifier FEATURES InputOffsetVoltage±1mV(TYP.)(±3mVMAX.) VIOTemperatureDrift±7μV/C(TYP.) InputBiasCurrent50pA(TYP.) SlewRate15V/μs(TYP.) UnityGainFrequency4MHz(TYP.) InputEquivalentNoiseVoltageDensity19nV/Hz(TYP.)(f=1kHz) Stableoperationagainst | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
NECsVARIABLEGAINAMPLIFIER 文件:720.1 Kbytes Page:4 Pages | CEL California Eastern Laboratories | |||
SILICONMMICUPCONVERTERWITHAGCIQMODULATOR 文件:67.41 Kbytes Page:5 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICUPCONVERTERWITHAGCIQMODULATOR 文件:176.91 Kbytes Page:15 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICUPCONVERTERWITHAGCIQMODULATOR 文件:176.91 Kbytes Page:15 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICUPCONVERTERWITHAGCIQMODULATOR 文件:67.41 Kbytes Page:5 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICUPCONVERTERWITHAGCIQMODULATOR 文件:176.91 Kbytes Page:15 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SILICONMMICLOWCURRENTAMPLIFIERFORMOBILECOMMUNICATIONS 文件:593.31 Kbytes Page:27 Pages | CEL California Eastern Laboratories | |||
BIPOLARANALOGINTEGRATEDCIRCUIT 文件:1.63019 Mbytes Page:25 Pages | CEL California Eastern Laboratories | |||
包装:盒 描述:EVAL BOARD FOR UPC8128 900MHZ 开发板,套件,编程器 射频评估和开发套件,开发板 | CEL California Eastern Laboratories | |||
包装:盒 描述:EVAL BOARD FOR UPC8128 1.9GHZ 开发板,套件,编程器 射频评估和开发套件,开发板 | CEL California Eastern Laboratories | |||
SIRFICQUADRATUREMODULATORWITHUPCONVERTERANDAGC 文件:36.41 Kbytes Page:3 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
SIRFICQUADRATUREMODULATORWITHUPCONVERTERANDAGC 文件:36.41 Kbytes Page:3 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
AudioBroadcastQuality800ASeries Features Deep-drawnsteelcasewithtinplatedfinish,withtwoconvenient6-32mountingstuds withhardware. Includeswireleads(minimumlengthof4). Frequencyresponse+/-0.5dbmax.from50Hz.to15Khz. Insertionlossofapx.1db. Maximumpowerlevel+15dbm.(except841A,842A&84 | HAMMOND Hammond Manufacturing Ltd. | |||
0.5CMOS1.65Vto3.6VQuadSPSTSwitches GENERALDESCRIPTION TheADG811/ADG812/ADG813arelowvoltageCMOSdevicescontainingfourindependentlyselectableswitches.Theseswitchesofferultralowonresistanceoflessthan0.8Ωoverthefull temperaturerange.Thedigitalinputscanhandle1.8Vlogicwitha2.7Vto3.6Vsupply. FE | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
Mill-MaxSpring-loadedConnectorsMinimizeNoise 文件:2.45329 Mbytes Page:11 Pages | MILL-MAX Mill-Max Manufacturing Corp. |
UPC812产品属性
- 类型
描述
- 型号
UPC812
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
DUAL J-FET INPUT LOW-OFFSET OPRERATIONAL AMPLIFIER
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
22+ |
SC70-6 |
9600 |
原装现货,优势供应,支持实单! |
|||
Renesas(瑞萨) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
NEC |
22+ |
SC363 |
57455 |
郑重承诺只做原装进口货 |
|||
NEC |
1642+ |
SOP8 |
3600 |
只做原装现货!一片起售! |
|||
NEC |
86 |
SOT23-6 |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
NA |
247 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
NEC |
2023+ |
SOP8 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
NEC |
21+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
20+/21+ |
SSOP |
9500 |
全新原装进口价格优惠 |
|||
NEC |
23+ |
SOT363 |
999999 |
原装正品现货量大可订货 |
UPC812规格书下载地址
UPC812参数引脚图相关
- wm7
- wimax网络
- wcdma手机
- w5500
- w300
- w230
- w200
- vp5
- voip技术
- viper22a
- viper22
- viper12
- vip12a
- vga接口
- v8000
- usb声卡
- usb连接器
- usb接口电路
- usb3.0
- UPS电源
- UPD2415-10
- UPD2415
- UPD166033T1U-E1-AY#YJ1
- UPD166025T1J-E1-AY
- UPD120N33T1B
- UPD1002-A/MQ
- UPD1001-AI/MQ
- UPD008A
- UPD007A
- UPD005A
- UPD004A
- UPD003A
- UPD002A
- UPD001A
- UPC844C
- UPC844
- UPC842C
- UPC842
- UPC832C
- UPC832
- UPC8232T5N-A
- UPC8231
- UPC8230TU-A
- UPC8211TK-E2-A
- UPC8191T5E
- UPC8182TB
- UPC8179TB
- UPC8179
- UPC8172TK
- UPC8172TB-A
- UPC8172TB
- UPC8163TB-E3
- UPC8158
- UPC8151TB-E3
- UPC814C
- UPC814
- UPC812C
- UPC8128TB
- UPC8125
- UPC8120T
- UPC8106TB-A
- UPC8106T
- UPC8106
- UPC8104
- UPC8103
- UPC8102
- UPC8101
- UPC8100
- UPC805T
- UPC8026
- UPC8002
- UPC8001
- UPC78L15T
- UPC78L12T
- UPC78L10T
- UPC78L08T
- UPC78L06T
- UPC78L05T
- UPC7805
- UPC754D
- UPC754
- UPC741C
- UPC741
- UPC71A
- UPC7073
- UPC667
- UPC666
- UPC659A
- UPC3239TB-A
- UPC3237TK-EVAL-A
- UPC3224TB
- UPC3223TB-A
- UPC3215TB
- UPC311G
- UPC29M33T-E1
- UPC29M33AT
- UPC29M10T-E1
- UPC29M08T
- UPC29M05AT-E1
- UPC29M05AT
UPC812数据表相关新闻
UPC816G-DIP4T-TG_UTC代理商
UPC816G-DIP4T-TG_UTC代理商
2023-3-14UPC817DG-SMD4R-TG_UTC代理商
UPC817DG-SMD4R-TG_UTC代理商
2023-2-3UPC324G2-E2-A
UPC324G2-E2-A
2022-6-6UPC8190T5E-E1,UPD16814GS,UPD17012GF-554,UPD17225GT-G02-E1,
UPC8190T5E-E1,UPD16814GS,UPD17012GF-554,UPD17225GT-G02-E1,
2020-2-27UPC317-3终端正可调稳压器
描述mPC317是正电压可调三端稳压器,其中有1.5一个输出电流能力。可以由两个外部电阻设置输出电压1.3V和30V之间的任何值。特点•超过1.5A的输出电流•芯片上的一些保护电路(过电流保护,SOA保护和热关机)。
2013-1-9UPC8112TB-IC
描述mPC8112TB是硅单片集成电路,第一频率下转换器设计用于蜂窝/无绳电话接收阶段。该IC组成的混频器和地方放大器。mPC8112TB功能高阻抗集电极开路输出。mPC2757TB和mPC2758TB类似的IC可提供低阻抗射极跟随输出。这些结核病后缀及晶片,体积更小比传统T后缀集成电路的封装有助于减少您的系统的大小。mPC8112TB是使用NEC公司的20GHz的FTNESAT™III硅双极工艺制造。此过程使用氮化硅钝化膜和金电极。这些材料可以从外部污染芯片表面保护防止腐蚀/迁移。因此,该IC具有优良的性能,均匀性和可靠性。应用
2012-12-14
DdatasheetPDF页码索引
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