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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
UPC358 | LOWPOWERDUALOPERATIONALAMPLIFIERS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
UPC358 | BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Internallyfrequencycompensation •WideoutputvoltageswingV–toV+–1.5V •CommonmodeinputvoltagerangeincludesV– •Widesupplyvoltagerange 3Vto30V(Single) ±1.5Vto±15V(Split) •Outputshortcircuitprotection | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
UPC358 | SinglePowerSupplyDualOperationalAmplifiers FEATURES -InputOffsetVoltage -InputOffsetCurrent -LargeSignalVoltageGain -InternalFrequencyCompensation -OutputShort-CircuitProtection | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Internallyfrequencycompensation •WideoutputvoltageswingV–toV+–1.5V •CommonmodeinputvoltagerangeincludesV– •Widesupplyvoltagerange 3Vto30V(Single) ±1.5Vto±15V(Split) •Outputshortcircuitprotection | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOWPOWERDUALOPERATIONALAMPLIFIERS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOWPOWERDUALOPERATIONALAMPLIFIERS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Internallyfrequencycompensation •WideoutputvoltageswingV–toV+–1.5V •CommonmodeinputvoltagerangeincludesV– •Widesupplyvoltagerange 3Vto30V(Single) ±1.5Vto±15V(Split) •Outputshortcircuitprotection | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SinglePowerSupplyDualOperationalAmplifiers FEATURES -InputOffsetVoltage -InputOffsetCurrent -LargeSignalVoltageGain -InternalFrequencyCompensation -OutputShort-CircuitProtection | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •InputOffsetVoltage •InputOffsetCurrent •LargeSignalVoltageGain •SmallPackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SinglePowerSupplyDualOperationalAmplifiers FEATURES -InputOffsetVoltage -InputOffsetCurrent -LargeSignalVoltageGain -InternalFrequencyCompensation -OutputShort-CircuitProtection | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •InputOffsetVoltage •InputOffsetCurrent •LargeSignalVoltageGain •SmallPackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
LOWPOWERDUALOPERATIONALAMPLIFIERS SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BipolarAnalogIntegratedCircuit Features •ThepackageiscompliantwithaJEDECstandard(MS-012). •Thermalresistancewasimprovedmorethan30fromexistingμPC358G2byadoptingcopper-basedleadmaterial. (Rth(j-a)=156°C/W) •WiderOperatingAmbientTemperaturerangethanμPC358G2 ⎯μPC358MF-DAA(TA=−40to+85°C | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BipolarAnalogIntegratedCircuit Features •ThepackageiscompliantwithaJEDECstandard(MS-012). •Thermalresistancewasimprovedmorethan30fromexistingμPC358G2byadoptingcopper-basedleadmaterial. (Rth(j-a)=156°C/W) •WiderOperatingAmbientTemperaturerangethanμPC358G2 ⎯μPC358MF-DAA(TA=−40to+85°C | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BipolarAnalogIntegratedCircuit Features •ThepackageiscompliantwithaJEDECstandard(MS-012). •Thermalresistancewasimprovedmorethan30fromexistingμPC358G2byadoptingcopper-basedleadmaterial. (Rth(j-a)=156°C/W) •WiderOperatingAmbientTemperaturerangethanμPC358G2 ⎯μPC358MF-DAA(TA=−40to+85°C | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALOPERATIONALAMPLIFIERS 文件：225.79 Kbytes Page：12 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALOPERATIONALAMPLIFIERS 文件：225.79 Kbytes Page：12 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALOPERATIONALAMPLIFIERS 文件：225.79 Kbytes Page：12 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALOPERATIONALAMPLIFIERS 文件：225.79 Kbytes Page：12 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALOPERATIONALAMPLIFIERS 文件：225.79 Kbytes Page：12 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
8-ChannelFault-ProtectedAnalogMultiplexer DESCRIPTION: Maxwells’s3588-Channelsingle-ended(1of8)multiplexerswithfaultprotectionfeaturesagreaterthan50krad(Si)totaldosetolerance,dependinguponspacemission.UsingaseriesN-channel,P-channel,N-channelstructure,thesemultiplexersprovidesignificantlyimprovedfault | Maxwell Maxwell |  | | |
MINIATUREFUSES-6.3x32mm 文件：71.51 Kbytes Page：2 Pages | LittelfuseLittelfuse Inc. 力特力特公司 |  | | |
3M??PowerClampWiremountPlug 文件：1.2751 Mbytes Page：4 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 |  | | |
LOWPOWERDUALOPERATIONALAMPLIFIERS 文件：257.64 Kbytes Page：13 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 |  | | |
LOWPOWERDUALOPERATIONALAMPLIFIERS 文件：57.04 Kbytes Page：2 Pages | BCDSEMIBCD Semiconductor Manufacturing Limited 新进半导体上海新进半导体制造有限公司 | | |
| 替换型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Dual Operational Amplifiers | PanasonicPanasonic Corporation 松下松下电器 |  | | |
Dual Operational Amplifiers | PanasonicPanasonic Corporation 松下松下电器 | | | |
Dual ground sense operational amplifier | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | | |
Dual operational amplifier | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | | | |
LOW POWER DUAL OPERATIONAL AMPLIFIERS | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DUAL, 1MHz OPERATIONAL AMPLIFIERS FOR COMMERCIAL INDUSTRIAL, AND MILITARY APPLICATION | HARRISHARRIS corporation |  | | |
NPN SILICON PLANAR HIGH CURRENT TRANSISTOR | GTM 勤益投資控股股份有限公司 |  | | |
DUAL OPERATIONAL AMPLIFIER | HynixHynix Semiconductor SK海力士海力士半导体 |  | | |
Dual Operational Amplifier | HitachiHitachi, Ltd. 日立公司 |  | | |
Dual Operational Amplifier | HitachiHitachi, Ltd. 日立公司 | | | |
Dual Operational Amplifier | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
Dual Operational Amplifier | HitachiHitachi, Ltd. 日立公司 | | | |
Dual Operational Amplifier | HitachiHitachi, Ltd. 日立公司 | | | |
High-Performance Dual Operational Amplifiers | SANYOSanyo 三洋三洋电机株式会社 |  | | |
LOW POWER DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Low power dual operational amplifi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | | |
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS | MotorolaMotorola, Inc 摩托罗拉 |  | | |
Low Power Dual Operational Amplifiers | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
Low power dual operational amplifiers | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Low power dual operational amplifiers | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
LOW POWER DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Single Supply Dual Operational Amplifiers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DUAL OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
DUAL OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LOW POWER DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Low Power Dual Operational Amplifiers | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 |  | | |
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS | MotorolaMotorola, Inc 摩托罗拉 | | | |
Low power dual operational amplifi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
DUAL, 1MHz OPERATIONAL AMPLIFIERS FOR COMMERCIAL INDUSTRIAL, AND MILITARY APPLICATION | HARRISHARRIS corporation | | | |
Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Single Supply Dual Operational Amplifiers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Low power dual operational amplifier | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
LOW POWER DUAL OPERATIONAL AMPLIFIER | TGSTiger Electronic Co.,Ltd |  | | |
DUAL OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL OPERATIONAL AMPLIFIERS | HTCHTC KOREA 韩国泰进技术股份有限公司 |  | | |
Single Supply Dual Operational Amplifiers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DUAL OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
DUAL OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
Dual Differential Input Operational Amplifiers | FCIAmphenol ICC |  | | |
contains two independent high gain operational amplifiers with internal compensation | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd |  | | |
DUAL OPERATIONAL AMPLIFIER | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
DUAL OPERATIONAL AMPLIFIERS | HTCHTC KOREA 韩国泰进技术股份有限公司 | | | |
Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Low power dual operational amplifi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS | MotorolaMotorola, Inc 摩托罗拉 | | | |
Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
Dual Operation Amplifiers | WINGSWing Shing Computer Components Wing Shing Computer Components |  | | |
LOW POWER DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
LOW POWER DUAL OPERATIONAL AMPLIFIERS | DIODESDiodes Incorporated 达尔科技 |  | | |
Single Supply Dual Operational Amplifiers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
DUAL, 1MHz OPERATIONAL AMPLIFIERS FOR COMMERCIAL INDUSTRIAL, AND MILITARY APPLICATION | HARRISHARRIS corporation | | | |
Dual Operational Amplifier | TAITRONTAITRON |  | | |
Low power dual operational amplifiers | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Low Power Dual Operational Amplifiers | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | | |
Low power dual operational amplifi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low power dual operational amplifiers | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Low Power Dual Operational Amplifiers | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Low Power Dual Operational Amplifiers | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
DUAL OPERATIONAL AMPLIFIERS | HTCHTC KOREA 韩国泰进技术股份有限公司 | | | |
Low power dual operational amplifiers | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DUAL, 1MHz OPERATIONAL AMPLIFIERS FOR COMMERCIAL INDUSTRIAL, AND MILITARY APPLICATION | HARRISHARRIS corporation | | | |
DUAL OPERATIONAL AMPLIFIERS | HTCHTC KOREA 韩国泰进技术股份有限公司 | | | |
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
LOW POWER DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Low power dual operational amplifi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
Low Power Dual Operational Amplifiers | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | | | |
DUAL DIFFERENTIAL INPUT OPERATIONAL AMPLIFIERS | MotorolaMotorola, Inc 摩托罗拉 | | | |
Dual Operational Amplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Low power dual operational amplifiers | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Single Supply Dual Operational Amplifiers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
LOW POWER DUAL OPERATIONAL AMPLIFIER | TGSTiger Electronic Co.,Ltd | | | |
Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
DUAL OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
LOW POWER DUAL OPERATIONAL AMPLIFIERS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
DUAL OPERATIONAL AMPLIFIERS | TITexas Instruments 德州仪器美国德州仪器公司 | | | |
Low power dual operational amplifi | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
SINGLE-SUPPLY OPERATIONAL AMPLIFIER | NJRCNew Japan Radio 新日本无线株式会社 |  | | |
SINGLE-SUPPLY OPERATIONAL AMPLIFIER | NJRCNew Japan Radio 新日本无线株式会社 | | | |
Integrated Circuit Low Power Dual Operational Amplifier | NTENTE Electronics, Inc |  | | |
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
DUAL OPERATIONAL AMPLIFIER | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
UPC358产品属性
- 类型
描述
- 型号
UPC358
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
LOW POWER DUAL OPERATIONAL AMPLIFIERS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
97+ |
SOP8 |
6790 |
全新原装进口自己库存优势 |
|||
NEC |
21+ |
SOP-8 |
3800 |
||||
NEC |
23+ |
SOP8 |
20000 |
全新原装假一赔十 |
|||
NEC |
2020+ |
SOP |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEC |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
23+ |
SOP8 |
10880 |
原装正品，支持实单 |
|||
NEC |
23+ |
SOP8 |
20000 |
原厂原装正品现货 |
|||
RENESAS(瑞萨)/IDT |
23+ |
PDIP8 |
6000 |
||||
NEC |
23+ |
DIP8 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NEC |
21+ |
SOP |
13880 |
公司只售原装,支持实单 |
UPC358芯片相关品牌
UPC358规格书下载地址
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描述mPC317是正电压可调三端稳压器，其中有1.5一个输出电流能力。可以由两个外部电阻设置输出电压1.3V和30V之间的任何值。特点•超过1.5A的输出电流•芯片上的一些保护电路（过电流保护，SOA保护和热关机）。
2013-1-9UPC8112TB-IC
描述mPC8112TB是硅单片集成电路，第一频率下转换器设计用于蜂窝/无绳电话接收阶段。该IC组成的混频器和地方放大器。mPC8112TB功能高阻抗集电极开路输出。mPC2757TB和mPC2758TB类似的IC可提供低阻抗射极跟随输出。这些结核病后缀及晶片，体积更小比传统T后缀集成电路的封装有助于减少您的系统的大小。mPC8112TB是使用NEC公司的20GHz的FTNESAT™III硅双极工艺制造。此过程使用氮化硅钝化膜和金电极。这些材料可以从外部污染芯片表面保护防止腐蚀/迁移。因此，该IC具有优良的性能，均匀性和可靠性。应用
2012-12-14
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