UPC277价格

参考价格:¥1.1700

型号:UPC2771T 品牌:NEC 备注:这里有UPC277多少钱,2024年最近7天走势,今日出价,今日竞价,UPC277批发/采购报价,UPC277行情走势销售排行榜,UPC277报价。
型号 功能描述 生产厂家&企业 LOGO 操作

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

3V,2400MHzMEDIUMPOWERSIMMICAMPLIFIER

DESCRIPTION TheUPC2771TisaSiliconMonolithicintegratedcircuitwhichismanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Thisamplifierwasdesignedasadriveramplifierfordigitalcellularapplications.Operatingona3volt

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz •Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz •Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=30mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz •Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=23.0mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+8.0dBmTYP.@f=0.9GHz PO(1dB)=+7.0dBmTYP.@f=1.9GHz PO(1dB)=+7.0dBmTYP.@f=2.4GHz •Powergain:GP=19.0dBTYP.@f=0.9GHz GP=2

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=30mATYP.@VCC=3.0V •Mediumoutputpower:PO(1dB)=+9.5dBmTYP.@f=0.9GHz PO(1dB)=+9.0dBmTYP.@f=1.9GHz PO(1dB)=+8.0dBmTYP.@f=2.4GHz •Powergain:GP=21.5dBTYP.@f=0.9GHz GP=20.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz •Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC2762TB,µPC2763TBandµPC2771TBaresiliconmonolithicintegratedcircuitsdesignedasamplifierformobilecommunications.TheseICsoperateat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. TheseICismanufacturedusingNEC’s20GHzfTN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

3V,2.9GHzSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC8182TBisasiliconmonolithicintegratedcircuitdesignedasamplifierformobilecommunications.ThisICoperatesat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. FEATURES •Supplyvoltage:VCC=2.7to3.3V •Circuitcurrent:ICC=3

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

DESCRIPTION TheµPC2762TB,µPC2763TBandµPC2771TBaresiliconmonolithicintegratedcircuitsdesignedasamplifierformobilecommunications.TheseICsoperateat3V.ThemediumoutputpowerissuitableforRF-TXofmobilecommunicationssystem. TheseICismanufacturedusingNEC’s20GHzfTN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITS

FEATURES •Supplyvoltage:VCC=2.7to3.3V •Mediumoutputpower:μPC2762TB;PO(1dB)=+8.0dBmTYP.@f=0.9GHz μPC2763TB;PO(1dB)=+9.5dBmTYP.@f=0.9GHz μPC2771TB;PO(1dB)=+11.5dBmTYP.@f=0.9GHz •Powergain:μPC2762TB;GP=13dBTYP.@f=0.9GHz μPC2763TB;GP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3V,2400MHzMEDIUMPOWERSIMMICAMPLIFIER

DESCRIPTION TheUPC2771TisaSiliconMonolithicintegratedcircuitwhichismanufacturedusingtheNESATIIIprocess.TheNESATIIIprocessproducestransistorswithfTapproaching20GHz.Thisamplifierwasdesignedasadriveramplifierfordigitalcellularapplications.Operatingona3volt

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

FREQUENCYDOWNCONVERTERFORVHF-UHFBANDTV/VCRTUNER

DESCRIPTION TheµPC2775GR/GSareSiliconmonolithicICsdesignedforTV/VCRtunerapplications.TheseICsconsistofdoublebalancedmixers(DBM),localoscillator,preamplifiersforprescaleroperation,IFamplifier,regulator,UHF/VHFswitchingcircuit,andsoon.TheseonechipICscoverawid

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

FREQUENCYDOWNCONVERTERFORVHF-UHFBANDTV/VCRTUNER

DESCRIPTION TheµPC2775GR/GSareSiliconmonolithicICsdesignedforTV/VCRtunerapplications.TheseICsconsistofdoublebalancedmixers(DBM),localoscillator,preamplifiersforprescaleroperation,IFamplifier,regulator,UHF/VHFswitchingcircuit,andsoon.TheseonechipICscoverawid

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

FREQUENCYDOWNCONVERTERFORVHF-UHFBANDTV/VCRTUNER

DESCRIPTION TheµPC2775GR/GSareSiliconmonolithicICsdesignedforTV/VCRtunerapplications.TheseICsconsistofdoublebalancedmixers(DBM),localoscillator,preamplifiersforprescaleroperation,IFamplifier,regulator,UHF/VHFswitchingcircuit,andsoon.TheseonechipICscoverawid

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

FREQUENCYDOWNCONVERTERFORVHF-UHFBANDTV/VCRTUNER

DESCRIPTION TheµPC2775GR/GSareSiliconmonolithicICsdesignedforTV/VCRtunerapplications.TheseICsconsistofdoublebalancedmixers(DBM),localoscillator,preamplifiersforprescaleroperation,IFamplifier,regulator,UHF/VHFswitchingcircuit,andsoon.TheseonechipICscoverawid

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

DESCRIPTION TheµPC2776TBisasiliconmonolithicintegratedcircuitsdesignedaswidebandamplifier.Thisamplifierhasimpedancenear50ΩinHFband,sothisICsuitstothesystemofHFtoLband.ThisICispackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold. The

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2.7GHzSILICONMIMICWIDEBANDAMPLIFIER

DESCRIPTIONANDAPPLICATIONS TheUPC2776TisaSiliconMonolithicintegratedcircuitmanufacturedusingtheNESATIIIprocess.ThisdeviceissuitableforwidebandIFblocksduetoitshighgainandflatresponse.TheUPC2776TisdesignedasalowcostICgainstageinDBS,TVRO,PCS,WLANando

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

2.7GHzSILICONMIMICWIDEBANDAMPLIFIER

DESCRIPTIONANDAPPLICATIONS TheUPC2776TisaSiliconMonolithicintegratedcircuitmanufacturedusingtheNESATIIIprocess.ThisdeviceissuitableforwidebandIFblocksduetoitshighgainandflatresponse.TheUPC2776TisdesignedasalowcostICgainstageinDBS,TVRO,PCS,WLANando

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

DESCRIPTION TheµPC2776TBisasiliconmonolithicintegratedcircuitsdesignedaswidebandamplifier.Thisamplifierhasimpedancenear50ΩinHFband,sothisICsuitstothesystemofHFtoLband.ThisICispackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold. The

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

DESCRIPTION TheµPC2776TBisasiliconmonolithicintegratedcircuitsdesignedaswidebandamplifier.Thisamplifierhasimpedancenear50ΩinHFband,sothisICsuitstothesystemofHFtoLband.ThisICispackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold. The

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=4.5to5.5V •Circuitcurrent:ICC=25mATYP.@VCC=5.0V •Powergain:GP=23dBTYP.@f=1GHz •Mediumoutputpower:PO(1dB)=+6.5dBm@f=1GHz •Upperlimitoperatingfrequency:fu=2.7GHzTYP.@3dBbandwidth •Portimpedance:input/out

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VCC=4.5to5.5V •Circuitcurrent:ICC=25mATYP.@VCC=5.0V •Powergain:GP=23dBTYP.@f=1GHz •Mediumoutputpower:PO(1dB)=+6.5dBm@f=1GHz •Upperlimitoperatingfrequency:fu=2.7GHzTYP.@3dBbandwidth •Portimpedance:input/out

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

DESCRIPTION TheµPC2776TBisasiliconmonolithicintegratedcircuitsdesignedaswidebandamplifier.Thisamplifierhasimpedancenear50ΩinHFband,sothisICsuitstothesystemofHFtoLband.ThisICispackagedinsuperminimoldpackagewhichissmallerthanconventionalminimold. The

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

SmallPackageSinglePowerSupplyDualComparator

FEATURES InputOffsetVoltage±2mV(TYP.) InputBiasCurrent17nA(TYP.) VoltageGain200000(TYP.) PulseResponseTime1.8μs(TYP.) OutputSinkCurrent16mA(TYP.) AwiredORispossibleastheoutputisanopencollector. LowVoltageOperationV+-V-:+2~+32V S

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SmallPackageSinglePowerSupplyDualComparator

FEATURES InputOffsetVoltage±2mV(TYP.) InputBiasCurrent17nA(TYP.) VoltageGain200000(TYP.) PulseResponseTime1.8μs(TYP.) OutputSinkCurrent16mA(TYP.) AwiredORispossibleastheoutputisanopencollector. LowVoltageOperationV+-V-:+2~+32V S

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

BIPOLARANALOGINTEGRATEDCIRCUIT

FEATURES •InputOffsetVoltage±2mV(TYP.)•AwiredORispossibleastheopencollectorisoutput. •InputBiasCurrent17nA(TYP.)•Alowvoltageoperationispossible.V+−V−:+2to+32V •VoltageGain200000(TYP.) •PulseResponseTime1.8μs(TYP.) •OutputSinkCurrent16mA(TY

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SmallPackageSinglePowerSupplyDualComparator

FEATURES InputOffsetVoltage±2mV(TYP.) InputBiasCurrent17nA(TYP.) VoltageGain200000(TYP.) PulseResponseTime1.8μs(TYP.) OutputSinkCurrent16mA(TYP.) AwiredORispossibleastheoutputisanopencollector. LowVoltageOperationV+-V-:+2~+32V S

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SmallPackageSinglePowerSupplyDualComparator

FEATURES InputOffsetVoltage±2mV(TYP.) InputBiasCurrent17nA(TYP.) VoltageGain200000(TYP.) PulseResponseTime1.8μs(TYP.) OutputSinkCurrent16mA(TYP.) AwiredORispossibleastheoutputisanopencollector. LowVoltageOperationV+-V-:+2~+32V S

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SmallPackageSinglePowerSupplyDualComparator

FEATURES InputOffsetVoltage±2mV(TYP.) InputBiasCurrent17nA(TYP.) VoltageGain200000(TYP.) PulseResponseTime1.8μs(TYP.) OutputSinkCurrent16mA(TYP.) AwiredORispossibleastheoutputisanopencollector. LowVoltageOperationV+-V-:+2~+32V S

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

SmallPackageSinglePowerSupplyDualComparator

FEATURES InputOffsetVoltage±2mV(TYP.) InputBiasCurrent17nA(TYP.) VoltageGain200000(TYP.) PulseResponseTime1.8μs(TYP.) OutputSinkCurrent16mA(TYP.) AwiredORispossibleastheoutputisanopencollector. LowVoltageOperationV+-V-:+2~+32V S

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

3V,SUPERMINIMOLDMEDIUMPOWERSIMMICAMPLIFIER

文件:188.12 Kbytes Page:7 Pages

CEL

California Eastern Laboratories

CEL

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

文件:240.2 Kbytes Page:28 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

3V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIERFORMOBILECOMMUNICATIONS

文件:240.2 Kbytes Page:28 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

封装/外壳:6-TSSOP,SC-88,SOT-363 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:IC AMP CELL 900MHZ-1.5GHZ SOT363 RF/IF,射频/中频和 RFID 射频放大器

CEL

California Eastern Laboratories

CEL

封装/外壳:6-TSSOP,SC-88,SOT-363 包装:卷带(TR) 描述:IC AMP CELL 900MHZ-1.5GHZ SOT363 RF/IF,射频/中频和 RFID 射频放大器

CEL

California Eastern Laboratories

CEL

3V,SUPERMINIMOLDMEDIUMPOWERSIMMICAMPLIFIER

文件:188.12 Kbytes Page:7 Pages

CEL

California Eastern Laboratories

CEL

5V,SILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

文件:320.16 Kbytes Page:14 Pages

CEL

California Eastern Laboratories

CEL

BIPOLARANALOGINTEGRATEDCIRCUIT

文件:416.77 Kbytes Page:13 Pages

CEL

California Eastern Laboratories

CEL

5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

文件:103.53 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

文件:103.53 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

5V,SUPERMINIMOLDSILICONMMICMEDIUMOUTPUTPOWERAMPLIFIER

文件:103.53 Kbytes Page:16 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

BIPOLARANALOGINTEGRATEDCIRCUITSINGLEPOWERSUPPLYDUALCOMPARATORSWITHSMALLPACKAGE

文件:212.75 Kbytes Page:12 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

277IN-LINESERIES32V20AIN-LINEBLADEFUSEHOLDER

Description The277In-LineSeries32V20AIn-LineBladeFuse HolderisavailableforATO®bladefusesaswellasFKS fusesandiscompatiblewithfusesratedupto20A(fuses soldseparately).Theeasy-to-installin-linefuseholder handlesupto15Aofcontinuouscurrent.Awaterproof 277

LittelfuseLittelfuse Inc.

力特富斯(Littelfuse)力特公司

Littelfuse

PrecisionIsolationAmplifierHighCMV/CMR,-5VFloating

文件:67.16 Kbytes Page:1 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

PrecisionIsolationAmplifierHighCMV/CMR,짹15VFloatingPower

文件:988.7 Kbytes Page:4 Pages

INTRONICS

Intronics Power, Inc.

INTRONICS

PrecisionIsolationAmplifierHighCMV/CMR,짹15VFloatingPower

文件:988.7 Kbytes Page:4 Pages

INTRONICS

Intronics Power, Inc.

INTRONICS

PrecisionIsolationAmplifierHighCMV/CMR,-5VFloating

文件:67.16 Kbytes Page:1 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

UPC277产品属性

  • 类型

    描述

  • 型号

    UPC277

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER

更新时间:2024-6-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
-
23+
NA/
13250
原厂直销,现货供应,账期支持!
NEC
2020+
SC70-6
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
NEC
24+
SOT-363
990000
明嘉莱只做原装正品现货
NEC
18+
SC70-6
9860
全新原装现货/假一罚百!
NEC
SOT-363
9699
集团化配单-有更多数量-免费送样-原包装正品现货-正规
RENESAS/瑞萨
SOT163
7906200
NEC
2022
SC70-6
503
原厂原装正品,价格超越代理
CEL
24+25+/26+27+
SOT-363
9328
一一有问必回一特殊渠道一有长期订货一备货HK仓库
NEC
23+
SOT163
8293
NEC
17+
SOT-363
6200
100%原装正品现货

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  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

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