BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 30 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 23.0 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 19.0 dB TYP. @ f = 0.9 GHz GP = 2

3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 3

3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER

DESCRIPTION The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless teleph

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz • Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. FEATURES • Supply voltage: VCC = 2.7 to 3.3 V • Circuit current: ICC = 3

3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system. These IC is manufactured using NEC’s 20 GHz fT N

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 23.0 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 19.0 dB TYP. @ f = 0.9 GHz GP = 2

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Circuit current : ICC = 30 mA TYP. @ VCC = 3.0 V • Medium output power : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz • Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz • Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

BIPOLAR ANALOG INTEGRATED CIRCUITS

FEATURES • Supply voltage : VCC = 2.7 to 3.3 V • Medium output power : μPC2762TB; PO(1 dB) = +8.0 dBm TYP. @ f = 0.9 GHz μPC2763TB; PO(1 dB) = +9.5 dBm TYP. @ f = 0.9 GHz μPC2771TB; PO(1 dB) = +11.5 dBm TYP. @ f = 0.9 GHz • Power gain : μPC2762TB; GP = 13 dB TYP. @ f = 0.9 GHz μPC2763TB; GP

3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs operate at 3 V. The medium output power is suitable for RF-TX of mobile communications system. These IC is manufactured using NEC’s 20 GHz fT N

3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER

DESCRIPTION The UPC2762T and UPC2763T are Silicon Monolithic integrated circuits which are manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. These amplifiers were designed for 900 MHz and 1.9 GHz receivers in cellular, cordless teleph

3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER

文件：183.71 Kbytes Page：7 Pages

3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：240.2 Kbytes Page：28 Pages

3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：240.2 Kbytes Page：28 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC AMP CELL 2.3GHZ-2.7GHZ SOT363 RF/IF，射频/中频和 RFID 射频放大器

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：MMIC AMP 3V 2.9GHZ SOT363 RF/IF，射频/中频和 RFID 射频放大器

3 V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER

文件：183.71 Kbytes Page：7 Pages

5.7 kV RMS Isolated, High Working Voltage, RS-485 Transceiver with 짹15 kV IEC ESD

GENERAL DESCRIPTION The ADM2761E/ADM2763E are 500 kbps, 5.7 kV rms, signal isolated RS-485 transceivers that pass radiated emissions testing to the EN 55032, Class B standard with margin on a 2-layer printed circuit board (PCB). These devices are compliant to the RS-485 and RS-422 communication s

5.7 kV RMS Isolated, High Working Voltage, RS-485 Transceiver with 짹15 kV IEC ESD

GENERAL DESCRIPTION The ADM2761E/ADM2763E are 500 kbps, 5.7 kV rms, signal isolated RS-485 transceivers that pass radiated emissions testing to the EN 55032, Class B standard with margin on a 2-layer printed circuit board (PCB). These devices are compliant to the RS-485 and RS-422 communication s

Dome Plugs

文件：105.62 Kbytes Page：1 Pages

N-Channel 700 V (D-S) Power MOSFET

文件：1.8451 Mbytes Page：8 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：136.92 Kbytes Page：5 Pages