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UPC271价格
参考价格：￥6.7918
型号：UPC2710TB-A 品牌：CEL 备注：这里有UPC271多少钱，2025年最近7天走势，今日出价，今日竞价，UPC271批发/采购报价，UPC271行情走势销售排行榜，UPC271报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UPC271 | Precision Voltage Comparators Precision Voltage Comparators | NEC 瑞萨 |   | |
UPC271 | High Performance Comparator FEATURES Input Offset Voltage ±2 mV (TYP.) Input Bias Current 100 nA (TYP.) Pulse Response Time 200 ns (TYP.) Equipped with a Strobe Terminal, ideal for interfacing with logic circuits. Two output circuit formats are possible. (open collector, emitter follower) Large output curre | RENESAS 瑞萨 | | |
UPC271 | Precision Voltage Comparators | RENESAS 瑞萨 | | |
1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b | NEC 瑞萨 | | ||
BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Supply voltage : VCC = 4.5 to 5.5 V • Circuit current : ICC = 22 mA TYP. @VCC = 5.0 V • Power gain : GP = 33 dB TYP. @ f = 500 MHz • Medium output power : PO(sat) = +13.5 dBm TYP. @ f = 500 MHz • Upper limit operating frequency : fu = 1.0 GHz TYP. @ 3 dB bandwidth • Port impedance | RENESAS 瑞萨 | | ||
BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Supply voltage : VCC = 4.5 to 5.5 V • Circuit current : ICC = 22 mA TYP. @VCC = 5.0 V • Power gain : GP = 33 dB TYP. @ f = 500 MHz • Medium output power : PO(sat) = +13.5 dBm TYP. @ f = 500 MHz • Upper limit operating frequency : fu = 1.0 GHz TYP. @ 3 dB bandwidth • Port impedance | RENESAS 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b | NEC 瑞萨 | | ||
2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and | NEC 瑞萨 | | ||
3 GHz SILICON MMIC WIDE-BAND AMPLIFIER DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and | NEC 瑞萨 | | ||
3 GHz SILICON MMIC WIDE-BAND AMPLIFIER DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and | NEC 瑞萨 | | ||
2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and | NEC 瑞萨 | | ||
2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a | NEC 瑞萨 | | ||
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a | NEC 瑞萨 | | ||
2.6 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a | NEC 瑞萨 | | ||
2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER DESCRIPTION The UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, a | NEC 瑞萨 | | ||
1.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. This IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon b | NEC 瑞萨 | | ||
BIPOLAR ANALOG INTEGRATED CIRCUIT 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT | RENESAS 瑞萨 | | ||
BIPOLAR ANALOG INTEGRATED CIRCUIT 1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT | RENESAS 瑞萨 | | ||
1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga | NEC 瑞萨 | | ||
1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga | NEC 瑞萨 | | ||
BIPOLAR ANALOG INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC = 3.4 V, ICC = 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the gain at 0.1 GHz • Input and output matching : 50 : • Super small package : 6 pin mini mold | RENESAS 瑞萨 | | ||
1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 1.2 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • Low power consumption : 15 mW (VCC= 3.4 V, ICC= 4.5 mA) TYP. • High power gain : 19 dB TYP. @ f = 0.5 GHz • Excellent frequency response: 1.2 GHz TYP. @ 3 dB down below the ga | NEC 瑞萨 | | ||
Precision Voltage Comparators Precision Voltage Comparators | NEC 瑞萨 | | ||
Precision Voltage Comparators Precision Voltage Comparators | NEC 瑞萨 | | ||
Precision Voltage Comparators Precision Voltage Comparators | NEC 瑞萨 | | ||
High Performance Comparator FEATURES Input Offset Voltage ±2 mV (TYP.) Input Bias Current 100 nA (TYP.) Pulse Response Time 200 ns (TYP.) Equipped with a Strobe Terminal, ideal for interfacing with logic circuits. Two output circuit formats are possible. (open collector, emitter follower) Large output curre | RENESAS 瑞萨 | | ||
5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER | CEL | | ||
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER 文件：117.38 Kbytes Page：16 Pages | NEC 瑞萨 | | ||
5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER 文件：320.16 Kbytes Page：14 Pages | CEL | | ||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件：416.77 Kbytes Page：13 Pages | CEL | | ||
5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER 文件：221.2 Kbytes Page：8 Pages | CEL | | ||
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER 文件：117.38 Kbytes Page：16 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER 文件：117.38 Kbytes Page：16 Pages | NEC 瑞萨 | | ||
5V, SUPER MINIMOLD MEDIUM POWER SI MMIC AMPLIFIER 文件：221.2 Kbytes Page：8 Pages | CEL | | ||
封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：IC AMP CELLULAR 700MHZ-1GHZ 6SO RF/IF，射频/中频和 RFID 射频放大器 | CEL | | ||
包装：盒 描述：EVAL BOARD FOR UPC2710TB 开发板，套件，编程器 射频评估和开发套件，开发板 | CEL | | ||
BIPOLAR ANALOG INTEGRATED CIRCUIT | RENESAS 瑞萨 | | ||
3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER 文件：334.89 Kbytes Page：21 Pages | RENESAS 瑞萨 | | ||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件：416.83 Kbytes Page：14 Pages | CEL | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：334.23 Kbytes Page：10 Pages | CEL | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：285.69 Kbytes Page：20 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：66.53 Kbytes Page：9 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：285.69 Kbytes Page：20 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：334.23 Kbytes Page：10 Pages | CEL | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：285.69 Kbytes Page：20 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：66.53 Kbytes Page：9 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：334.23 Kbytes Page：10 Pages | CEL | | ||
BIPOLAR ANALOG INTEGRATED CIRCUIT 文件：416.83 Kbytes Page：14 Pages | CEL | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：334.23 Kbytes Page：10 Pages | CEL | | ||
3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER 文件：334.89 Kbytes Page：21 Pages | RENESAS 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：285.69 Kbytes Page：20 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：66.53 Kbytes Page：9 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：66.53 Kbytes Page：9 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：285.69 Kbytes Page：20 Pages | NEC 瑞萨 | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：334.23 Kbytes Page：10 Pages | CEL | | ||
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER 文件：334.23 Kbytes Page：10 Pages | CEL | | ||
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 文件：44.78 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 文件：44.78 Kbytes Page：5 Pages | NEC 瑞萨 | | ||
1.8 GHz LOW POWER CONSUMPTION WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT 文件：186.35 Kbytes Page：6 Pages | NEC 瑞萨 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Single/Quad Types Comparators | GESS | GESS | | |
High Performance Voltage Comparators | TGS | TGS | | |
Voltage comparator | Philips 飞利浦 | Philips | | |
Voltage comparator with strobe | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Voltage comparator | Philips 飞利浦 | Philips | | |
DIFFERENTIAL COMPARATORS WITH STROBES | TI 德州仪器 | TI | | |
Single Comparators | ONSEMI 安森美半导体 | ONSEMI | | |
HIGH PERFORMANCE VOLTAGE COMPARATORS | ONSEMI 安森美半导体 | ONSEMI | | |
DIFFERENTIAL COMPARATORS WITH STROBES | TI 德州仪器 | TI | | |
Highly Flexible Voltage Comparators | INTEGRALIntegral Corp. | INTEGRAL | | |
Voltage Comparator | NSC 国半 | NSC | | |
Voltage comparator | Philips 飞利浦 | Philips | | |
Single Comparator | Fairchild 仙童半导体 | Fairchild | | |
Voltage comparator | Philips 飞利浦 | Philips | | |
HIGH PERFORMANCE VOLTAGE COMPARATORS | ONSEMI 安森美半导体 | ONSEMI | | |
Voltage comparator with strobe | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
Single Comparators | ONSEMI 安森美半导体 | ONSEMI | | |
High Performance Voltage Comparators | TGS | TGS | | |
DIFFERENTIAL COMPARATORS WITH STROBES | TI 德州仪器 | TI | | |
DIFFERENTIAL COMPARATORS WITH STROBES | TI 德州仪器 | TI | | |
Integrated Circuit Voltage Comparator | NTE | NTE | | |
INDUSTRIAL LINEAR ICS | ETC1 | ETC1 | | |
PRECISION VOLTAGE COMPARATORS | NEC 瑞萨 | NEC | |
UPC271产品属性
- 类型
描述
- 型号
UPC271
- 功能描述
Analog IC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CEL |
25+ |
SOT-363 |
860000 |
明嘉莱只做原装正品现货 |
|||
CEL |
24+ |
SOT-363 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
NEC |
2023+ |
SOT363 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
性/XM |
24+ |
NA/ |
4787 |
原装现货,当天可交货,原型号开票 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
7607 |
支持大陆交货,美金交易。原装现货库存。 |
|||
NEC |
2016+ |
SOT23-6 |
81000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
CEL |
24+ |
SOT-363 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
NEC |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
NEC |
25+ |
SOP8 |
3000 |
全新原装、诚信经营、公司现货销售! |
|||
NEC |
25+ |
SOT-363 |
41317 |
NEC全新特价UPC2711TB-E3即刻询购立享优惠#长期有货 |
UPC271规格书下载地址
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2012-12-14
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