3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and

BIPOLAR ANALOG INTEGRATED CIRCUIT

DESCRIPTION\nThe µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellula telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.\nThis IC is manufactured using NEC’s 20 GHz fT NESATTM lll silicon bipolar • Supply voltage : VCC= 4.5 to 5.5 V\n• Circuit current : ICC= 22 mA TYP. @VCC= 5.0 V\n• Power gain : GP= 33 dB TYP.@ f = 500 MHz\n• Medium output power : PO(sat)= +13.5 dBm TYP.@ f = 500 MHz\n• Upper limit operating frequency : fu= 1.0 GHz TYP.@ 3 dB bandwidth\n• Port impedance : input/output 50 Ω\;

BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 ´ 1.25 ´ 0.9 mm) • Wideband response : fu = 2.9 GHz TYP. @ 3 dB bandwidth • Medium output power : PO(sat) = +10 dBm TYP. @ f = 1 GHz with external inductor • Supply voltage : VCC = 4.5 to 5.5 V • Power gain : GP = 15

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2708TB has compatible pin connections and performance to µPC2708T of conventional

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2708TB has compatible pin connections and performance to µPC2708T of conventional

丝印代码：C1D；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • High-density surface mounting : 6-pin super minimold package (2.0 ´ 1.25 ´ 0.9 mm) • Wideband response : fu = 2.9 GHz TYP. @ 3 dB bandwidth • Medium output power : PO(sat) = +10 dBm TYP. @ f = 1 GHz with external inductor • Supply voltage : VCC = 4.5 to 5.5 V • Power gain : GP = 15

3 GHz SILICON MMIC WIDE-BAND AMPLIFIER

DESCRIPTION The UPC2708T and UPC2711T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：100.58 Kbytes Page：16 Pages

5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：416.77 Kbytes Page：13 Pages

5 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：320.16 Kbytes Page：14 Pages

5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER

文件：211.39 Kbytes Page：8 Pages

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：100.58 Kbytes Page：16 Pages

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

文件：100.58 Kbytes Page：16 Pages

5 V, SUPER MINIMOLD WIDEBAND SI RFIC AMPLIFIER

文件：211.39 Kbytes Page：8 Pages

封装/外壳：6-TSSOP，SC-88，SOT-363 包装：卷带（TR） 描述：IC AMP CELL 2.7GHZ-2.9GHZ SOT363 RF/IF，射频/中频和 RFID 射频放大器

包装：盒 描述：EVAL BOARD FOR UPC2708TB 开发板，套件，编程器 射频评估和开发套件，开发板

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-ca

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-ca

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations

Dual Non-Inverting Power Driver

文件：221.48 Kbytes Page：5 Pages