Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-ca

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- • VCEO(SUS)= 825V (Min) • High Switching Speed APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-ca

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2708TB has compatible pin connections and performance to µPC2708T of conventional

Dual Non-Inverting Power Driver

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