NECs NPN SILICON RF TWIN TRANSISTOR

DESCRIPTION NECs UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NECs new ult

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

NPN SILICON RF TWIN TRANSISTOR

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NECs NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TWIN TRANSISTOR

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

NECs NPN SILICON RF TWIN TRANSISTOR

DESCRIPTION NECs UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NECs new ult

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

NPN SILICON RF TWIN TRANSISTOR

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UHF linear push-pull power transistor

DESCRIPTION NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. FEATURES • Double stage internal input and output matching networks for an optimum wideband

Silicon epitaxial planar type

Silicon epitaxial planar type For band switching ■ Features • Two electrically independent elements incorporated • Small diode capacitance CD • Low forward dynamic resistance rf • Optimum for a band switching of tuner

RAIL TO RAIL MICROPOWER BICMOS COMPARATORS

DESCRIPTION The TS86x (Single, Dual & Quad) is a Rail to Rail comparator characterized for 2.7V to 10V operation over -40°C to +85°C temperature range. It exhibits an excellent speed to power ratio, featuring a current consumption of 6µA per comparator and a response time of 500ns at 2.7V for

RAIL TO RAIL MICROPOWER BICMOS COMPARATORS

DESCRIPTION The TS86x (Single, Dual & Quad) is a Rail to Rail comparator characterized for 2.7V to 10V operation over -40°C to +85°C temperature range. It exhibits an excellent speed to power ratio, featuring a current consumption of 6µA per comparator and a response time of 500ns at 2.7V for

Quadruple ESD transient voltage suppressor

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