NECs NPN SILICON RF TWIN TRANSISTOR

DESCRIPTION NECs UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor, featuring low noise and high gain. NECs new ult

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

NPN Silicon RF Twin Transistor with 2 Different Elements

FEATURES • Low voltage operation • 2 different built-in transistors (2SC5010, 2SC5801) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz Q2: Built-in low phase distortion transistor suited for OSC operation fT = 4

NPN SILICON RF TWIN TRANSISTOR

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