NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION\nThe UPA836TC contains one NE685 and one NE688 NPN high frequency silicon bipolar chip. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configure • SMALL PACKAGE OUTLINE:\n1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package\n• LOW HEIGHT PROFILE:\nJust 0.55 mm high\n• FLAT LEAD STYLE:\nReduced lead inductance improves electrical performance\n• TWO DIFFERENT DIE TYPES:\nQ1 - Ideal oscillator transistor\nQ2 - Ideal buffer amplifi;

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

NPN SILICON EPITAXIAL TWIN TRANSISTOR

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NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：16.72 Kbytes Page：2 Pages

NPN SILICON EPITAXIAL TWIN TRANSISTOR

P-Channel 2.5V Specified MOSFET

General Description SuperSOTTM -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performa

Linear Integrated Circuit TV Horizontal Processor

Description: The NTE836 is a TV Horizontal Processor in an 8–Lead DIP type package that includes a phase detector, oscillator and pre–driver. This device is designed for use in all types of television receivers that have negative flyback inputs. Features: • Internal Shunt Regulator •

MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE HIGH

DESCRIPTION The TS836 ultra low power integrated circuit incorporates a high stability band-gap voltage reference and a comparator with open drain output. The threshold voltage is set at 4.5V for TS836-4 by internal thermally matched resistances. The comparator exhibits a 20µs response (with 10

MicroConverter, Dual 16-Bit/24- Bit ADCs with Embedded 62 kB Flash MCU

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