NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The µPA836TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA • High gain Q1 : |

SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature sur

Silicon 25V hyperabrupt varactor diodes

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

Silicon 25V hyperabrupt varactor diodes

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

Surface Mount Zener Diodes

Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

83 SERIES MOLDED DIP THRU-HOLE AND SURFACE MOUNT DRY REED RELAYS

[GORDOS] REED RELAYS 83 SERIES MOLDED DIP THRU-HOLE AND SURFACE MOUNT DRY REED RELAYS