NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION The µPA832TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA Q2 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA • High gain Q1

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION The µPA832TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA Q2 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA • High gain Q1

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION The µPA832TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA Q2 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA • High gain Q1

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：58.72 Kbytes Page：9 Pages

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：58.72 Kbytes Page：9 Pages

NPN SILICON EPITAXIAL TWIN TRANSISTOR

文件：58.72 Kbytes Page：9 Pages

Heavy duty 30A general purpose Power Relays.

Features Heavy duty 30A general purpose Power Relays. UL/CUL (UL 508 & 873), VDE safety approvals. Optional for open frame, dust cover, sealed type and with and without quick terminal on top, etc. High insulation type & high dielectric strength type available. Contact gap to 2.0mm, hig

Heavy duty 30A general purpose Power Relays.

Features Heavy duty 30A general purpose Power Relays. UL/CUL (UL 508 & 873), VDE safety approvals. Optional for open frame, dust cover, sealed type and with and without quick terminal on top, etc. High insulation type & high dielectric strength type available. Contact gap to 2.0mm, hig

SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature sur

Silicon 25V hyperabrupt varactor diodes

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature surfac

Pérmanent Magnets

文件：859.98 Kbytes Page：8 Pages