NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S

NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE

DESCRIPTION The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band. FEATURES • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (2SC5006, 2SC5007) • Low noise Q1: NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz Q2: NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA831TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range with excellent linearity for two-stage amplifiers. T

NPN SILICON EPITAXIAL TWIN TRANSISTOR

DESCRIPTION The UPA831TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range with excellent linearity for two-stage amplifiers. T

NPN SILICON EPITAXIAL TWIN TRANSISTOR

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NPN SILICON EPITAXIAL TWIN TRANSISTOR

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FLOATING SEALS

Description Track vehicles and construction machinery are constantly evolving, as they face extreme environments and come into contact with dust, water and mud splashes, and stone, as well as the effects of ultra violet rays and aggressive fluids. Such restrictions mean that strong floating seals

SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature sur

PC Mount, Shocksafe 5x20mm Fuses

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Cartridge Fuse Holders Enclosed Fuseholders > Circuit Board Mounted

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Pérmanent Magnets

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