P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA678TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

Old Company Name in Catalogs and Other Documents

DESCRIPTION The µ PA678TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA678TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V

Power MOSFETs for Automotive

RECTIFIERS ASSEMBLIES

Three Phase Bridge Standard & Fast Recovery ● Current ratings to 25A ● VRRM to 600V ● Only fused-in-glass diodes used ● 150°C junction temperature ● Surge rating to 150A ● Recovery times to 500nS ● Electrically isolated Aluminum case ● Controlled avalanche characteristics ● MIL-PRF-19

Aluminum Capacitors 105 °C, Miniature, Radial Lead

FEATURES • Improved SMPS output capacitors • Highest ripple current ratings per case size • High CV • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

4-STAGE RETARD CONTROL

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횠16.0mm mounting Black anodised aluminium housing

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Aluminum Capacitors 105 °C, Miniature, Radial Lead

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