P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA653TT is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V dr

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA653TT is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS

Multi-Function Multi-Range Solid-State

• Functions As Timer or Counter • Five Time Ranges • Six Single-Cycle and Eight Repeat-Cycle Timing Modes • Sealed Faceplate • Cycle Counter • Count Input Scaling • Data Retention Memory with EEPROM Circuitry. (653-8-4000, 653-8-4001 Models) • Data Retention Memory with Lithium Battery (inc

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MINIATURE FUSEHOLDERS

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DC Block 1.85mm-F to 1.85mm-M

文件：178.99 Kbytes Page：2 Pages

DC Block 1.85mm-F to 1.85mm-M

文件：178.99 Kbytes Page：2 Pages