N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA621TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.5 A) RDS(on)3 = 79 mΩ MAX. (VGS = 2.5 V, ID = 2.5 A)

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Varistor Specification

Applications Features ● Surge Protection in consumer electronics ● Fast response -- industrial electronics ● Excellent voltage ratio -- telephone and telecommunication systems ● High stabilization for circuit voltage -- automobile equipments ● Unparalleled absorption for transient voltage

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