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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
UPA2791GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel | NEC 瑞萨 |   | |
UPA2791GR | N- and P-Channel 30 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank | VBSEMI 微碧半导体 | | |
UPA2791GR | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 mΩ MAX. (VG | RENESAS 瑞萨 | | |
UPA2791GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 mΩ MAX. (VG | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 mΩ MAX. (VG | RENESAS 瑞萨 | | ||
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UPA2791GR产品属性
- 类型
描述
- 型号
UPA2791GR
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
3350 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
PSOP8 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS |
1601+ |
SOP8 |
32500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS/瑞萨 |
20+ |
SOP-8 |
63258 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
2450+ |
SOP-8 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
Renesas |
21+ |
22410 |
只做原装鄙视假货15118075546 |
||||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
NEC |
2402+ |
SOP-8 |
8324 |
原装正品!实单价优! |
|||
RENESAS/瑞萨 |
25+ |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
RENESAS/瑞萨 |
24+ |
NA |
43250 |
郑重承诺只做原装进口现货 |
UPA2791GR规格书下载地址
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