DESCRIPTION

The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application.

FEATURES

• Low on-state resistance

N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A)

RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A)

P-channel RDS(on)1 = 82 mΩ MAX. (VGS = −10 V, ID = −3.0 A)

RDS(on)2 = 110 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A)

• Low gate charge

N-channel QG = 10 nC TYP. (VGS = 10 V)

P-channel QG = 8.3 nC TYP. (VGS = −10 V)

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)