MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2708GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low

SWITCHING N-CHANNEL POWER MOSFET

SWITCHING N-CHANNEL POWER MOSFET

文件：140.02 Kbytes Page：7 Pages

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2708GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2708GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2708GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2708GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low

SWITCHING N-CHANNEL POWER MOSFET

文件：140.02 Kbytes Page：7 Pages

SWITCHING N-CHANNEL POWER MOSFET

文件：140.02 Kbytes Page：7 Pages

SWITCHING N-CHANNEL POWER MOSFET

文件：140.02 Kbytes Page：7 Pages

SWITCHING N-CHANNEL POWER MOSFET

文件：140.02 Kbytes Page：7 Pages

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-ca

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-ca

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations

5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

DESCRIPTION The µPC2708TB is a silicon monolithic integrated circuit designed as buffer amplifier for BS/CS tuners. This IC is packaged in super minimold package which is smaller than conventional minimold. The µPC2708TB has compatible pin connections and performance to µPC2708T of conventional

Dual Non-Inverting Power Driver

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