NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY

DESCRIPTION The μPA2001C, 2002C, 2003C and 2004C are monolithic arrays of seven darlington transistors. These devices are especially suited for driving relays, solenoids, LED, lamps, and other devices with up to 0.3 A output current per unit. FEATURES ● Transient Protected Outputs ● High DC C

NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY

1.0 Watt - 28 Volts, Class C Microwave 2000 MHz

GENERAL DESCRIPTION The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

US Power Supply Cord with IEC Connector C13, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

7½-Digit High Performance Multimeter 8½-Digit High Performance Multimeter

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Snap Bushings

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boxes and ancillary products

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