P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applications s

MOS FET WITH SCHOTTKY BARRIER DIODE

DESCRIPTION The μ PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applicatio

Dual P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch

Power MOSFETs

SigmaDSP??3-Channel, 26-Bit Signal Processing DAC

FEATURES AC ’97 2.3 COMPATIBLE FEATURES 6 DAC Channels for 5.1 Surround S/PDIF Output Integrated Stereo Headphone Amplifier Variable Rate Audio Double Rate Audio (fS = 96 kHz) Greater than 90 dB Dynamic Range 20-Bit PCM DACs Line-Level Mono ”Phone” Inpu

Heyco® Foam Washers

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WIRE & CABLE TERMINATION

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AC ??7 SoundMAX Codec

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AC 97 SoundMAX Codec

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