DESCRIPTION

The μ PA1980 is a switching device, which can be driven

directly by a 1.8 V power source.

This device incorporates a MOS FET, which features a low

on-state resistance and excellent switching characteristics,

and a low leakage Schottky barrier diode, and is suitable for

applications such as DC/DC converter of portable machine

and so on.

FEATURES

• 1.8 V drive available (MOS FET)

• Low on-state resistance (MOS FET)

RDS(on)1 = 135 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A)

RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A)

RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A)

• Low reverse current (Schottky barrier diode)

IR = 20 μA MAX. (VR = 40 V)