N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1870 is a switching device which can be driven directly by a 2.5-V power source. The µPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1870 is a switching device which can be driven directly by a 2.5-V power source. The μPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1870B is a switching device which can be driven directly by a 2.5 V power source. The μPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1870B is a switching device which can be driven directly by a 2.5 V power source. The µPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

Dual N-Channel MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1870B is a switching device which can be driven directly by a 2.5 V power source. The µPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V dr

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1870B is a switching device which can be driven directly by a 2.5 V power source. The μPA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA1870 is a switching device which can be driven directly by a 2.5-V power source. The μPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1870 is a switching device which can be driven directly by a 2.5-V power source. The µPA1870 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be dri

Power MOSFETs

Dual N-Channel 30-V (D-S) MOSFET

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WILMAR??Protective Relays - 1800 Series

Function: 25 • ANSI/IEEE C37.90-1978 • UL file No. E58048 • CSA file No. LR61158 Application: These relays are designed for automatic paralleling (synchronizing) of generators. The relays sense the phase angle displacement and the amplitude difference between two voltages and permit parall

High-speed Switching Transistor (-60V, -12A)

High-speed Switching Transistor (-60V, -12A)

20mm Coin Cell Breakout Board (CR2032)

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Heyco® RDD Lockit™ Strain Relief Bushings – Straight-Thru

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Broadband Resistive Power Splitter

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