SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1792 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on. FEATURES • Low on-resistance N-Channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A)

MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-state resistance N-channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A) RDS(on)3 = 42 mΩ MAX. (VGS = 4.0 V, ID = 3.4 A) P-channel RDS(on)1 = 36 mΩ MAX. (VGS = −10 V, ID = −2.9 A) RDS(on)2 = 54 mΩ MAX. (VGS = −4.5 V, ID = −2.

SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N- AND P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1792 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on. FEATURES • Low on-resistance N-Channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A)

MOS FIELD EFFECT TRANSISTOR

FEATURES • Low on-state resistance N-channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A) RDS(on)3 = 42 mΩ MAX. (VGS = 4.0 V, ID = 3.4 A) P-channel RDS(on)1 = 36 mΩ MAX. (VGS = −10 V, ID = −2.9 A) RDS(on)2 = 54 mΩ MAX. (VGS = −4.5 V, ID = −2.

2-CHANNEL, 5-ELEMENT GRAPHIC EQUALIZER IC

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

2-CHANNEL, 5-ELEMENT GRAPHIC EQUALIZER IC

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Integrated Circuit Dual Attenuator

Description: The NTE1792 is a silicon monolithic integrated circuit in a 9–Lead SIP package designed for sound control applications. Features: • Two separate attenuators • The characteristic control curve is linear against logarithmic output. • Channel Separation: 64dB MIN • Ty