FEATURES

• Low on-state resistance

N-channel RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 3.4 A)

RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 3.4 A)

RDS(on)3 = 42 mΩ MAX. (VGS = 4.0 V, ID = 3.4 A)

P-channel RDS(on)1 = 36 mΩ MAX. (VGS = −10 V, ID = −2.9 A)

RDS(on)2 = 54 mΩ MAX. (VGS = −4.5 V, ID = −2.9 A)

RDS(on)3 = 65 mΩ MAX. (VGS = −4.0 V, ID = −2.9 A)

• Low input capacitance

N-channel Ciss = 760 pF TYP.

P-channel Ciss = 900 pF TYP.

• Built-in G-S protection diode

• Small and surface mount package (Power SOP8)