SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES • Dual MOS FET chips in small package • 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 mΩ (MAX.) (V

MOS FIELD EFFECT TRANSISTOR

FEATURES • Dual MOS FET chips in small package • 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A) • Low Ciss : Ciss = 1100 pF (TYP.) • Built-in G-S protection diode • Small and surface mount pac

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

Bipolar Transistor (-)50V, (-)30A, Low VCE(sat) Complementary Dual ECH8

Bipolar Transistor (–)50V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A

Offline Step-down LED Driver With PFC and High Voltage Current Source

FEATURES
No auxiliary winding
Supplied from line voltage directly
high voltage power MOSFET integrated
High current accuracy of line and load regulation
High power factor
Critical conduction mode
High efficiency over wide operating range
LED open protection
ISP over vol

Barrier Terminal Blocks

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Quick Start Guide Ethernet Switch

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