SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RD

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 12.5 mW TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mW TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mW TYP. (VGS = –4.0 V, ID = –4 A) · Low Ciss : Ciss = 2100 pF TYP. · Built-in G-S protection d

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThis product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.FEATURES\n• Low on-resistance\n   RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A)\n   RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A)\n   RDS(on • Low on-resistance\n   RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A)\n   RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A)\n   RDS(on)3 = 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A)\n• Low Ciss : Ciss = 2100 pF TYP.\n• Built-in G-S protection diode\n• Small and surface mount package (Power SOP8);

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES · Low on-resistance RDS(on)1 = 12.5 mW TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mW TYP. (VGS = –4.5 V, ID = –4 A) RDS(on)3 = 19.0 mW TYP. (VGS = –4.0 V, ID = –4 A) · Low Ciss : Ciss = 2100 pF TYP. · Built-in G-S protection d

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RD

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, TELEPHONE POWER-SUPPLY USE)

HIGH-VOLTAGE SWITCHING TRANSISTOR ​​​​​​​TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage : VCEO=-600V • Low VCE(sat) (Typ. -0.25V((IC=-300mA, IB=-60mA). • Fast Switching. • Wide SOA.

Integrated Circuit Reversible Motor Driver for VCR

Features: • Supply Voltage Range: 6V to 18V • Power Dissipation: 2200mW • Output Motor Driving Current up to 1600mA • Two Control Logic Inputs Allow Switching of Three Output States: Forward Reverse Braking • Low Standby Current • Adjustable Output Voltage Enabl

High-Speed, Adjustable, Synchronous Step-Down Controllers with Integrated Voltage Positioning

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