EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, TELEPHONE POWER-SUPPLY USE)

HIGH-VOLTAGE SWITCHING TRANSISTOR ​​​​​​​TELEPHONE POWER-SUPPLY USE. FEATURES • High Breakdown Voltage : VCEO=-600V • Low VCE(sat) (Typ. -0.25V((IC=-300mA, IB=-60mA). • Fast Switching. • Wide SOA.

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, TELEPHONE POWER-SUPPLY USE)

TYPE N MALE R.A. FOR 195R/RG58

IMPEDANCE: 50 OHM FREQUENCY RANGE: DC ~ 6 GHz VOLTAGE RATING: 1500 VOLTS DIELECTRIC WITHSTANDING VOLTAGE: 2500 V rms CABLE RETENTION: 30 LBS APPLICATION: LOW-LOSS 195 SERIES & RG58. COMPONENT SHALL BE INDIVIDUALLY PACKAGED IN ACCORDANCE WITH L-COM SPECIFICATION PS-0031. ALL DIMENSIONS ARE

Customer SpecificationS

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 20 (26/34) AWG Tinned Copper 0.038 b) Insulation 0.015 Wall, Nom. Polyethylene(PE) 0.068 (1) Color Code Alpha Wire Color Code H Cond Color Cond Color Cond Color 1 BLACK 3 RED 5 YELLOW 2 WHITE 4 GREEN 2) Cable Assembly 5 Co

Qualia Bare Driver Board for LP097QX1 Display

 Dimensions: 45mm x 85mm / 1.8 x 3.4  Mounting Holes Distance: 37mm x 77mm / 1.5 x 3  Weight: 21g

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A) RDS(on)2 = 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A) RD

Thin Panel Dome Plugs

文件：117.65 Kbytes Page：1 Pages