MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of note book computers. FEATURES • Low On-Resistance RDS(on)1 = 27 mW Typ. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mW Typ. (VGS = 4 V, ID = 3.5 A) • Low Ciss Ciss

MOS FIELD EFFECT POWER TRANSISTORS

DESCRIPTION The μ PA1700A is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. FEATURES • Low On-Resistance RDS(on)1 = 27mΩ MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50mΩ MAX. (VGS = 4 V, ID = 3.5 A) • Low Input Capacitance Ciss

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers. FEATURES • Low On-Resistance RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A) • Low Input Capacitanc

MOS FIELD EFFECT POWER TRANSISTOR

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of note book computers. FEATURES • Low On-Resistance RDS(on)1 = 27 mW Typ. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 50 mW Typ. (VGS = 4 V, ID = 3.5 A) • Low Ciss Ciss

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Radial Lead Inductors

DESCRIPTION The 1700 Series is a general-purpose range of inductors suitable for low to medium current applications. Their small footprint makes them ideal for high-density applications where a chip inductor will not cope with the power requirement. FEATURES ■ Radial Format ■ Up to 1

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