MONOLITHIC POWER MOS FET ARRAY

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

COMPOUND FIELD EFFECT POWER TRANSISTOR

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MONOLITHIC POWER MOS FET ARRAY

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

COMPOUND FIELD EFFECT POWER TRANSISTOR

文件：446.1 Kbytes Page：10 Pages

Customer Specification

Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 26 (7/34) AWG Bare Copper 0.019 b) Insulation 0.009 Wall, Nom. Polypropylene(PP) 0.037 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN 2 RED 4 YELLOW 2) Cable Assembly 4 Components run parallel under jac

Tubular Vitreous Enamelled Wirewound Resistors

General Information Vitreous enamelled wirewound resistors are capable of withstanding a higher dissipation size for size, than any other protected type; this is attributable to the higher operating temperature which the wire and enamel can withstand. Vitreous enamel provides exceptionally good p

Manufactured ROHS compliant pb-free terminations

General Information Vitreous enamelled wirewound resistors are capable of withstanding a higher dissipation size for size, than any other protected type; this is attributable to the higher operating temperature which the wire and enamel can withstand. Vitreous enamel provides exceptionally good p

Tubular Vitreous Enamelled Wirewound Resistors

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Customer Specification

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