N-CHANNEL ENHANCEMENT MODE

The UMBF170 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. • RDS(ON)<5Ω@VGS=10V \n• RDS(ON)<5.3Ω@VGS=4.5V \n• Low Reverse Transfer Capacitance ( CRSS = typical 7.5 pF ) \n• Fast Switching Capability \n• Improved dv/dt Capability, High Ruggedness;

N-CHANNEL ENHANCEMENT MODE

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N-CHANNEL ENHANCEMENT MODE

文件：153.21 Kbytes Page：2 Pages

TMOS FET Switching(N-Channel-Enhancement)

TMOS FET Switching N–Channel — Enhancement

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly