PIN DIODE

Description UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less tha

PIN DIODE

Description UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less tha

PIN DIODE

Description UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less tha

PIN DIODE

Description UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less tha

PIN DIODE

Description UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less tha

PIN DIODE

Description UM2300 Series PIN diodes are designed for transmit / receive switch and attenuator application in LF band ( 100 KHz ) and above. As series configured switches, these long lifetime (80 mS typ) diodes can control up to 2.5 KW CW in a 50 ohm system. In MF band, insertion loss is less tha

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

20V P-Channel Power MOSFET

文件：279.7 Kbytes Page：7 Pages

Silicon & GaAs PIN Diodes

20V P-Channel Power MOSFET

文件：200.22 Kbytes Page：7 Pages

-20V P沟道功率MOSFET

20V P-Channel Power MOSFET

文件：200.22 Kbytes Page：7 Pages

20V P-Channel Power MOSFET

文件：279.7 Kbytes Page：7 Pages

20V P-Channel Power MOSFET

文件：200.22 Kbytes Page：7 Pages

20V P-Channel Power MOSFET

文件：279.7 Kbytes Page：7 Pages

-20V P沟道功率MOSFET

20V N-Channel Power MOSFET

文件：288.13 Kbytes Page：7 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

20V N-Channel Power MOSFET

文件：202.62 Kbytes Page：7 Pages

20V N-Channel Power MOSFET

文件：288.13 Kbytes Page：7 Pages

20V N-Channel Power MOSFET

文件：202.62 Kbytes Page：7 Pages

20V N-Channel Power MOSFET

文件：288.13 Kbytes Page：7 Pages

20V N-Channel Power MOSFET

文件：202.62 Kbytes Page：7 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

MINIATURE FUSES - 5x20 mm

文件：60.42 Kbytes Page：2 Pages

5x20 mm MINIATURE FUSES

文件：60.72 Kbytes Page：2 Pages

Modular Radio Telemetry System

文件：396.37 Kbytes Page：11 Pages

1/4 FLAT PLUG PHONE PLUGS

文件：26.97 Kbytes Page：1 Pages