PIN DIODE

DESCRIPTION UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30MHz) and below. As series configured switches, these long lifetime (25μs typical) diodes can control up to 2.5 kW, CW in a 50 ohm system. In HF band, insertion loss is less

HF-UHF Medium & High Power PIN Diodes

UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30MHz) and below. As series configured switches these long lifetime (25?s typical) diodes can control up to 2.5 kW CW in a 50 ohm system. In HF band insertion loss is less than 0.25dB and isol

ATTENUATOR AND POWER PIN DIODES 2 ??30 MHz

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Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

封装/外壳：轴向 包装：卷带（TR） 描述：SI PPIN HERMETIC GLASS AXIAL 分立半导体产品 二极管 - 射频

Product Change Notification

文件：2.81601 Mbytes Page：221 Pages

封装/外壳：接线柱 包装：卷带（TR） 描述：SI PPIN HERMETIC STUD 分立半导体产品 二极管 - 射频

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda