NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI UHBS15-2 is Designed for Class C, FM Base Station Applications up to 960 MHz. FEATURES: • Internal Input Matching Network • PG = 9.0 dB at 15 W/960 MHz • Omnigold™ Metalization System

NPN SILICON RF POWER TRANSISTOR

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NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR

文件：18.88 Kbytes Page：1 Pages

500 mW Zener Diode 1.7 to 37.2 Volts

Features • Low Leakage • Low Zener Impedance • High Reliability

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.6 V through 38 V of zener voltage provide flexible application.

Silicon Planar Zener Diode for Stabilized Power Supply

Features • Low leakage, low zener impedance and maximum power dissipation of 500 mW. • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • LLD Package is suitable for high density surface mounting and high speed assembly.

Directional Coupler 50??15dB 800 to 2000 MHz

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