| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
POWERMOSFET Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
P-CHANNELPOWERMOSFETs FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightmeperaturereliability | SamsungSamsung Group 三星三星半导体 |  | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa | VishayVishay Siliconix 威世科技 |  | | |
PowerMOSFET 文件：277.52 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMOSFETTransistor 文件：280.77 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
2141 |
原装正品代理渠道价格优势 |
|||
IR |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
||||
IR |
12+ |
TO-220 |
2500 |
原装现货/特价 |
|||
Infineon/英飞凌 |
23+ |
TO-263-2 |
12700 |
买原装认准中赛美 |
|||
INFINEON/英飞凌 |
标准封装 |
50326 |
一级代理原装正品现货期货均可订购 |
||||
IR |
22+ |
TO-220 |
3255 |
强势库存!原装现货! |
|||
原厂 |
2020+ |
TO-263 |
20000 |
公司代理品牌,原装现货超低价清仓! |
|||
IR |
21+ |
TO263 |
15 |
原装现货假一赔十 |
|||
IR |
24+ |
TO-263 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
IR |
1404/1414 |
1 |
普通 |
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DdatasheetPDF页码索引
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