RECTIFIERS

DUCRIPTION This Series is specifically designed for operation in power switching circuits operating at frequencies of at least 20KHz. The very low forward voltage and very fast recovery time make them particularly suited for switching type power supplies. FEATURE • High Continuous Current Ratin

High Efficiency, 50A and 70A

DUCRIPTION This Series is specifically designed for operation in power switching circuits operating at frequencies of at least 20KHz. The very low forward voltage and very fast recovery time make them particularly suited for switching type power supplies. FEATURE • High Continuous Current Ratin

Rectifier Diode Switching 2-Pin 70A, 50V, 50ns DO-5 Tray

This series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz. The very low forward voltage and very fast recovery time make them particulary suited for switching type power supplies. High continuos current rating \n Very low forward voltage \n Very fast switching speeds \n High surge capacity \n Low thermal resistance \n Mechanically rugged DO-5 package;

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Diode Switching 50V 70A 2-Pin DO-5

Ultra Fast Rectifier (trr less than 100ns)

70A, 50V Ultra-fast Rectifier. Reverse Polarity (anode-to-stud).Datasheet: UES801 through UES803, BYW78-50 through BYW78-150

封装/外壳：DO-203AB，DO-5，接线柱 包装：卷带（TR） 描述：RECTIFIER 分立半导体产品 二极管 - 整流器 - 单

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead